SSBR20100CTF

                                                 SSBR20100CT  SSBR20100CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×10A 100V 150C 0.8V Features and Benefits: High Junction Temperature High ESD Protection, IEC Model ±10Kv High Forward & Reverse Surge capability    TO220  SSBR20100CT  TO220F  SSBR20100CTF    Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) IF(AV) IFSM IRRM TJ Tstg Symbol RθJC RθJC Symbol VR VF IR RMS Reverse Voltage Average Forward Current Per diode Per device Characterizes Peak Repetitive Reverse Voltage Value 100 70 10 20 180 0.5 -50~150 -50~150 Value TO220 TO220F Max 0.8 0.75 0.1 5 Unit V V mA 2 4 Unit V V A A A A ℃ ℃ Unit ℃/W ℃/W Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) Peak Repetitive Reverse Surge Current(Tp=2us) Maximum operation Junction Temperature Range Storage Temperature Range Characterizes Maximum Thermal Resistance Junction To Case Characterizes Reverse Breakdown Voltage Forward Voltage Drop Leakage Current Min 100 Typ Thermal Resistance Electrical Characterizes @TA=25℃ unless otherwise specified Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=10A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ ©Silikron Semiconductor CO.,LTD.   2009.5.15 www.silikron.com  Version : 1.0 page 1of3                                                  SSBR20100CT  SSBR20100CTF I-V Curves； Figure 1：Typical Forward Characteristics Figure 2：Typical Reverse Characteristics ©Silikron Semiconductor CO.,LTD.   2009.5.15 www.silikron.com  Version : 1.0 page 2of3                                                  SSBR20100CT  SSBR20100CTF Mechanical Data： TO220 TO220F： ©Silikron Semiconductor CO.,LTD.   2009.5.15 www.silikron.com  Version : 1.0 page 3of3