SSF0115

SSF0115 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF0115 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF0115 is assembled in high reliability and qualified assembly house. Application: IEEE802.3AF Compatible SSF0115 TOP View (SOT-223) ID =3A BV=100V Rdson=0.15Ω Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJA Junction-to-ambient Min. — Typ. — Max. 69 Units C/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range –55 to +150 Max. 3 2.3 12 1.8 0.019 ±20 79 TBD W W/ ْC V mJ mJ v/ns ْC A Units *When mounted on the minimum pas size recommended（PCB Mount）. Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 100 — 2.0 — — — — 2009.6.10 Typ. — 0.09 — — — — — Max. Units — 0.15 4.0 1 10 100 -100 μA V Ω V Test Conditions VGS=0V,ID=250μA VGS=10V,ID=2A VDS=VGS,ID=250μA VDS=30V,VGS=0V VDS=100V, VGS=0V,TJ=150ْC VGS=20V VGS=-20V Version : 1.0 page 1of5 IGSS nA ©Silikron Semiconductor CO.,LTD. SSF0115 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — 18 2.7 7.8 12 12 33 26 350 90 35 22 — — 40 40 85 68 480 110 45 pF nS VDD=50V ID=9.2A ,RL=5.4Ω RG=18Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ nC ID=9.2A,VGS=10V VDD=80V,RL=8.6Ω Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 98 0.34 Max. 3 A 18 1.3 — — V nS μC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=3A,VGS=0V ③ TJ=25ْC,IF=9.2A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =30mH, VDD = 50V,Id=2.3A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 2of5 SSF0115 EAS Test Circuit: Gate Charge Test Circuit: Switch Time Test Circuit: Switch Waveform: Gate Charge Source-Drain Diode Forward Voltage ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 3of5 SSF0115 On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 4of5 SSF0115 SOT-223 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 5of5