SSF1016

SSF1016 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1016 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF1016 TOP View (T0-220) ID =75A BV=100V Rdson=16mΩ(Max.） Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 0.55 — Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 100 — 2.0 — — — — 2009.8.10 Typ. — 11 — — — — — Max. Units — 16 4.0 2 10 100 -100 V V Test Conditions VGS=0V,ID=250μA VDS=VGS,ID=250μA VDS=100V,VGS=0V mΩ VGS=10V,ID=30A μA VDS=100V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V Version : 1.0 page 1of5 IGSS ©Silikron Semiconductor CO.,LTD. SSF1016 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — 90 20 31 18.2 15.6 70.5 13.8 3150 350 240 nS — — VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V pF VDS=25V f=1.0MHZ nC ID=30A,VGS=10V VDD=30V Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 57 107 Max. 75 A 300 1.3 — — V nS μC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=60A,VGS=0V ③ TJ=25ْC,IF=75A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 50V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C EAS Test Circuit: Gate Charge Test Circuit: ©Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 2of5 SSF1016 Switch Time Test Circuit: Switch Waveform: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 3of5 SSF1016 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 4of5 SSF1016 TO-220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 5of5