SSF2418E

SSF2418E DESCRIPTION The SSF2418E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2418E Device SSF2418E Device Package SOT23-6 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±12 6 30 1.3 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 20 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF2418E Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA VGS=4.5V, ID=6A Drain-Source On-State Resistance RDS(ON) VGS=4.0V, ID=5.5A VGS=3.1V, ID=5A VGS=2.5V, ID=4A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.76 1 V td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=6A, VGS=4.5V VDD=10V,ID=1A VGS=4.5V,RGEN=10Ω 20 50 64 40 8 1.5 2 nS nS nS nS nC nC nC Clss Coss Crss VDS=10V,VGS=0V, F=1.0MHz 650 170 150 PF PF PF gFS VDS=5V,ID=6A 0.5 18 19 21 25 7 1 21 22 26 30 V mΩ mΩ mΩ mΩ S IDSS IGSS VDS=20V,VGS=0V VGS=±12V,VDS=0V 1 ±10 μA uA NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF2418E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr 90% Vdd Rl D G S Vout td(on) td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF2418E SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF2418E ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 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Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0