SSF2616E

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF2616E Device SSF2616E Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 20 ±12 7 5 25 1.5 -55 To 150 Unit V V A A A W ℃ VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Min Typ Max Unit ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.1 SSF2616E Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA VGS=4.5V, ID=6.5A Drain-Source On-State Resistance RDS(ON) VGS=4V, ID=6A VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.5A 0.84 1.2 V td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=7A, VGS=4.5V VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 10 11 35 30 10 2.3 3 20 25 70 60 15 nS nS nS nS nC nC nC Clss Coss Crss VDS=8V,VGS=0V, F=1.0MHz 600 330 140 PF PF PF gFS VDS=10V,ID=6.5A 0.6 0.75 16.5 17 19 22 6.6 1.2 22 23 26 30 V mΩ mΩ mΩ mΩ S BVDSS IDSS IGSS VGS=0V ID=250μA VDS=20V,VGS=0V VGS=±4.5V,VDS=0V VGS=±10V,VDS=0V 20 1 ±200 ±10 V μA nA uA NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.1 SSF2616E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr 90% Vdd Rl D G Vout td(on) td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN S 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) ID- Drain Current (A） PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(mΩ) ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS ©Silikron Semiconductor CO.,LTD. Figure 6 Drain-Source On-Resistance 3 http://www.silikron.com v1.1 SSF2616E Normalized On-Resistance Vgs Gate-Source Voltage (V) ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Rdson On-Resistance(mΩ) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.1 SSF2616E ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.1 SSF2616E SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exa ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v1.1 SSF2616E ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 7 http://www.silikron.com v1.1