SSF2701

SSF2701 GENERAL FEATURES ● N-Channel VDS = 20V,ID = 2.4A RDS(ON) < 125mΩ @ VGS=4.5V RDS(ON) < 200mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -2.8A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 150mΩ @ VGS=-2.5V N-channel P-channel Schematic diagram ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package Pin Assignment TSOP-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2701 Device SSF2701 Device Package TSOP-6 Reel Size － Tape width － Quantity － ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD TJ,TSTG N-Channel 20 ±12 2.4 1.7 8 1.15 0.6 -55 To 150 P-Channel -20 ±12 -2.8 -2 -10 1.15 0.6 -55 To 150 Unit V V A A W ℃ Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch P-Ch 87 87 ℃/W ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF2701 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA VGS=0V ID=-250μA VDS=20V,VGS=0V VDS=-20V,VGS=0V VGS=±12V,VDS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch VDD=10V, RL=10Ω VGEN=4.5V,RGEN=6Ω P-Ch N-Ch P-Ch P-Ch VDD=-10V, RL=10Ω VGEN=-4.5V,RGEN=6Ω N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch VDS=10V,ID=2.4A, VGS=4.5V P-Ch VDS=-10V,ID=-2.8A, VGS=-4.5V P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -0.5 100 80 160 110 5 9 10 12 28 35 16 19 8 22 3.8 8 0.9 1.1 0.8 2.6 20 -20 1 -1 ±100 ±100 1 -1 125 100 200 150 S mΩ V Symbol Condition Min Typ Max Unit Zero Gate Voltage Drain Current IDSS μA Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IGSS nA VGS(th) VDS=VGS,ID=250μA VDS=VGS,ID=-250μA VGS=4.5V, ID=2.4A V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-2.8A VGS=2.5V, ID=1.8A VGS=-2.5V, ID=-2A Forward Transconductance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time gFS VDS=5V,ID=2.4A VDS=-5V,ID=-2.8A td(on) nS Turn-on Rise Time tr nS Turn-Off Delay Time td(off) nS Turn-Off Fall Time tf nS Total Gate Charge Qg nC Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A VGS=0V,IS=-1A N-Ch P-Ch 0.8 -0.8 1.1 -1.1 V V ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF2701 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. N-Channel THERMAL CHARACTERISTICS r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF2701 TSOP-6 PACKAGE INFORMATION SYMBOL A A1 b c D E E1 e L NOTES： Millimeters MIN 0.90 0.10 0.30 0.08 2.70 2.60 1.40 0.95 BSC 0.35 0.55 0.50 0.20 3.10 3.00 1.80 MAX 1.10 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF2701 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0