SSF3014

SSF3014 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF3014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF3014 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF3014 TOP View (TO220) ID =60A BV=60V Rdson=10mohm Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS VGS(th) gfs IDSS Drain-to-Source breakdown voltage Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60 — 2.0 — — — — 60 — — — — Min. — — Typ. — 7.2 Typ. 1.03 — Max. Units — 10 4.0 — 2 10 100 -100 μA V V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 60 42 240 120 0.74 ±20 235 TBD –55 to +150 ْC W W/ ْC V mJ A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Test Conditions VGS=0V,ID=250μA VDS=VGS,ID=250μA VDS=5V,ID=30A VDS=60V,VGS=0V VDS=60V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V mΩ VGS=10V,ID=30A IGSS ©Silikron Semiconductor CO.,LTD. 2009.5.15 Version : 1.0 page 1of5 SSF3014 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — 45 4 15 14.6 14.2 40 7.3 1480 190 135 — — — — — — — — — — pF nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ nC ID=30A VDD=30V VGS=10V Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 33 61 Max. 60 A 240 1.3 — — V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=40A,VGS=0V ③ TJ=25ْC,IF=60A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C EAS test circuit: BV dss Gate charge test circuit: ©Silikron Semiconductor CO.,LTD. 2009.5.15 Version : 1.0 page 2of5 SSF3014 Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD. 2009.5.15 Version : 1.0 page 3of5 SSF3014 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2009.5.15 Version : 1.0 page 4of5 SSF3014 TO220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2009.5.15 Version : 1.0 page 5of5