SSF3018

SSF3018 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 13.8mohm. Application: Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC Junction-to-case Min. — Typ. 0.85 Max. — Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 60 50 240 147 2.0 ±20 480 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018 TOP View (TO220) Units ID=60A BV=100V Rdson=15mohm Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance — Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage Total gate charge Gate-to-Source charge 2009.7.15 Min. 100 — 2.0 Typ. — 13.8 42 — — — — 49 15 Max. Units — 15 4.0 — 1 10 0 100 -100 — — Version: 1.0 Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=10V,ID=30A VDS=100V,VGS=0V VDS=100V, VGS=0V,TJ=150ْC VGS=20V VGS=-20V ID=10A VDS=0.5VDSS page 1of5 V mΩ V S μA — — — — — IGSS Qg Qgs nA nC ©Silikron Semiconductor CO. LTD. SSF3018 Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — 11 27 40 43 37 2650 335 60 — — — — — — — — pF nS VGS=10V VDS=0.5VDSS ID=10A RG=15Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 37A, VDD = 50V Continuous Source Current. (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . Min. — — — － － Typ. — — — 59 112 Max. 60 A 240 1.3 — — V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=30A,VGS=0V ③ IF=0.5*IS, VGS=0V, VR=0.5*VDSS di/dt=100A/μs ③ Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C EAS test circuits: BV dss Gate charge test circuit: ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 2of5 SSF3018 Switch Time Test Circuit： Switch Waveforms: Input Admittance Capacitance On Resistance vs. Junction Temperature On Resistance vs. Drain Current ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 3of5 SSF3018 Gate Charge Forward Voltage Drop of Intrinsic Diode Output Characteristics@25℃ Drain Current vs. Case Temperature Maximum Transient Thermal Impedance ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 4of5 SSF3018 TO220 MECHANICAL DATA: ©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 5of5