SSF3022D

SSF3022D Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF3022 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF3022 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF3022D TOP View (DPAK) ID =60A BV=100V Rdson=22mohm Absolute Maximum Ratings Parameter ID@Tc=25ْ C IDM Continuous drain current,VGS@10V Pulsed drain current ① Linear derating factor VGS EAS EAR TJ TSTG Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — ② ID@Tc=100ْC Continuous drain current,VGS@10V PD@TC=25ْC Power dissipation Max. 60 50 240 100 2.0 ±20 240 TBD –55 to +150 ْC W W/ْ C V mJ A Units Thermal Resistance Typ. 1.25 — Max. — 62.5 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2008.11.13 Min. 100 — 2.0 — — — Typ. — 16 3.0 58 — — — Max. Units — 22 4.0 — 1 10 100 μA nA V mΩ V S Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=5V,ID=30A VDS=100V,VGS=0V VDS=100V, VGS=0V,TJ=150ْC VGS=20V page 1of5 ©Silikron Semiconductor CO.,LTD Version : 1.0 SSF3022D Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — — — 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 -100 — — — — — — — — — — pF nS nC VGS=-20V ID=30A VDD=30V VGS=10V VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 57 107 Max. 60 A 240 1.3 — — V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=30A,VGS=0V ③ TJ=25ْC,IF=60A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Notes: Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C BV dss EAS test circuit Gate charge test circuit ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 2of5 SSF3022D Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 3of5 SSF3022D Source-Drain Diode Forward Voltage Gate Charge Max Drain Current vs Junction Temperature Safe Operation Area Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 4of5 SSF3022D DPAK MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 5of5