SSF3117
DESCRIPTION
The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
GENERAL FEATURES
● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF
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