SSF3420

SSF3420 DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3420 Device SSF3420 Device Package SOT23-6 Reel Size Ø180mm Tape width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 30 ±20 6.3 4.8 20 1.6 -55 To 150 Unit V V A A W ℃ VDS VGS ID（25℃） ID（70℃） Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 78 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 30 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3420 Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) IDSS IGSS VDS=24V,VGS=0V VGS=±20V,VDS=0V 1 ±100 μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.5V, ID=5.5A VGS=10V, ID=6.3A VDS=10V,ID=6.3A 1 1.9 26 20 10 3 33 25 V mΩ mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Clss Coss Crss VDS=15V,VGS=0V, F=1.0MHz 600 150 70 PF PF PF Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS td(on) tr td(off) tf Qg Qgs Qgd Trr Qrr IF=6.3A, dI/dt=100A/µs VDS=15V,ID=6.3A,VGS=10V VDS=15V,VGS=10V,RGEN=6Ω ID=1A 8 4 22 4 10 2 2 18 9 nS nS nS nS nC nC nC nS nC Diode Forward Voltage (Note 3) VS D VGS=0V,IS=1.3A 0.8 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) ID- Drain Current (A） PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(mΩ) ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF3420 Normalized On-Resistance Vgs Gate-Source Voltage (V) ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) C Capacitance (pF) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Is- Reverse Drain Current (A) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.0 ©Silikron Semiconductor CO.,LTD. SSF3420 ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area ZthJA Normalized Transient Thermal Resistance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0 SSF3420 SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v1.0 SSF3420 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 7 http://www.silikron.com v1.0