SSF4006

SSF4006 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4006 is assembled in high reliability and qualified assembly house. Application: Commercial-industrial application SSF4006 TOP View (T0-220) ID =160A BV=40V Rdson=0.005Ω Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 0.83 — Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range ② Max. 160 100 640 150 2.0 ±20 480 TBD 31 –55 to +150 W W/ْ C V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 40 — 2.0 — — — — 2009.6.10 Typ. — — — — — — Max. Units — 4.0 1 10 100 -100 V Ω V Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=40V,VGS=0V 0.0045 0.005 μA VDS=40V, VGS=0V,TJ=150ْC nA VGS=20V VGS=-20V Version : 1.0 page 1of4 IGSS ©Silikron Semiconductor CO.,LTD. SSF4006 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 nS — — VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V pF VDS=25V f=1.0MHZ nC ID=30A,VGS=10V VDD=30V Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 57 107 Max. 160 A 640 1.3 — — V nS μC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=40A,VGS=0V ③ TJ=25ْC,IF=75A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 47V,Id=57A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 2of4 SSF4006 EAS Test Circuit: Gate Charge Test Circuit: Switch Time Test Circuit: Switch Waveform: ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 3of4 SSF4006 TO-220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 4of4