SSF6808

SSF6808 Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF6808 TOP View (TO220) ID =110A BV=55V Rdson=8mohm Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2008.8.1 Max. 110 80 400 150 2.0 ±20 31 ② 480 TBD –55 to +150 Units A W W/ْ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range Min. — — Min. 55 — 2.0 — — — Typ. — 6 3 58 — — — ْC Typ. 0.83 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Max. Units — 8 4.0 — 1 10 100 μA nA page Test Conditions VGS=0V,ID=250μA VGS=10V,ID=68A VDS=VGS,ID=250μA VDS=5V,ID=30A VDS=55V,VGS=0V VDS=55V, VGS=0V,TJ=150ْC VGS=20V 1of5 V mΩ V S ©Silikron Semiconductor CO.,LTD. Version : 1.0 SSF6808 Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — — — 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 -100 — — — — — — — — — — pF nS nC VGS=-20V ID=30A VDD=30V VGS=10V VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Reverse Recovery Time Forward Turn-on Time . . Min. — — — － － Typ. — — — 57 107 Max. 110 A 400 1.3 — — V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=68A,VGS=0V ③ TJ=25ْC,IF=68A di/dt=100A/μs ③ VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 27.5V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C BV dss EAS Test Circuit Gate charge test circuit ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 2of5 SSF6808 Switch Time Test Circuit Switch Time Waveforms Gate Charge Source-Drain Diode Forward Voltage On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 3of5 SSF6808 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 4of5 SSF6808 TO220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 5of5