SSF7509

SSF7509 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.2mohm. Application: Power switching application SSF7509 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2008.8.1 ID=80A BV=80V Rdson=8mohm Max. 80 72 320 165 2.0 ±20 31 500 TBD –55 to +150 Units A W W/ ْC V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range ْC Min. — — Min. 80 — 2.0 — — — 58 — — — Typ. — Typ. 0.75 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Max. Units — 4.0 — 2 10 100 μA nA V Ω V S Test Conditions VGS=0V,ID=250μA VGS=10V,ID=40A VDS=VGS,ID=250μA VDS=5V,ID=30A VDS=80V,VGS=0V VDS=80V, VGS=0V,TJ=150ْC VGS=20V page 1of5 0.0067 0.008 ©Silikron Semiconductor CO.,LTD. Version : 1.0 SSF7509 Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — — — — — — — — — — — — 100 18 28 20 17.8 76.8 15.7 3200 330 260 -100 — — — — — — — — — — nS VGS=-20V ID=30A nC VDD=30V VGS=10V VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. — — — － － Typ. — — — 57 108 Max. 80 A 320 1.3 — — V nS nC Units showing the integral reverse p-n junction diode. TJ=25ْC,IS=40A,VGS=0V ③ TJ=25ْC,IF=75A di/dt=100A/μs ③ Test Conditions MOSFET symbol Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 47V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C EAS test circuits: BV dss Gate charge test circuit: ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 2of5 SSF7509 Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 3of5 SSF7509   Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 4of5 SSF7509 TO220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 5of5