SSF8421

SSF8421 GENERAL FEATURES ●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V ●P-Channel Schematic diagram VDS = -20V,ID = -3.5A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V Marking and pin Assignment ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8421 Device SSF8421 Device Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch P-Ch 83 100 ℃ /W Symbol VDS VGS ID IDM PD TJ,TSTG N-Channel 20 ±12 4.5 30 1.0 -55 To 150 P-Channel -20 ±12 -3.5 -30 1.0 -55 To 150 Unit V V A A W ℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter OFF CHARACTERISTICS Symbol Condition Min Typ Max Unit ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 1 of 4 A Good-Ark Company SSF8421 Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA VGS=0V ID=-250μA VDS=20V,VGS=0V VDS=-20V,VGS=0V VGS=±12V,VDS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 1 -1 ±100 ±100 V Zero Gate Voltage Drain Current IDSS μA Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IGSS nA VGS(th) VDS=VGS,ID=250μA VDS=VGS,ID=-250μA VGS=4.5V, ID=4.5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -0.6 23 40 30 60 20 10 30 50 40 85 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3.5A VGS=2.5V, ID=3.9A VGS=-2.5V, ID=-2.7A mΩ Forward Transconductance gFS VDS=10V,ID=4.5A VDS=-10V,ID=-3.5A S SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) N-Ch VDD=10 V,ID=1A VGEN=10V,RGEN=6Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VDD=-10V,ID=-1A VGEN=-10V,RGEN=6Ω P-Ch N-Ch P-Ch N-Ch N-Ch VDS=15V,ID=4.5A,VGS=4.5V P-Ch N-Ch P-Ch P-Ch VDS=-15V,ID=-4.5A,VGS=-3.5V N-Ch P-Ch 22 27 40 30 50 55 20 21 10 14 2.5 3.5 3.0 3.5 50 50 80 60 100 100 40 40 20 25 nS Turn-on Rise Time tr nS Turn-Off Delay Time td(off) nS Turn-Off Fall Time tf nS Total Gate Charge Qg nC Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 2 of 4 A Good-Ark Company SSF8421 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.25A VGS=0V,IS=-1.25A N-Ch P-Ch 1.2 -1.2 V V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. N-Channel THERMAL CHARACTERISTICS r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 3 of 4 A Good-Ark Company SSF8421 TSSOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 4 of 4 A Good-Ark Company