SSF8822

SSF8822 DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. G1 D1 D2 G2 S1 S2 Marking and pin Assignment GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.6V RDS(ON) < 32mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=1.8V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF8822 Device SSF8822 Device Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±12 7 30 1.5 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=16V,VGS=0V VGS=±10V,VDS=0V Min 20 Typ Max Unit V 1 ±100 μA nA ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF8822 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=1mA VGS=10V, ID=7A VGS=4.5V, ID=6.6A Drain-Source On-State Resistance RDS(ON) VGS=3.6V, ID=6A VGS=2.5V, ID=5.5A VGS=1.8V, ID=2A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=1A 0.7 1 2.5 V A td(on) tr td(off) tf Qg Qgs Qgd trr Qrr IF=7A, dI/dt=100A/µs IF=7A, dI/dt=100A/µs VDS=10V,ID=7A, VGS=4.5V VDS=10V, RL=1.4Ω VGS=5V,RGEN=3Ω 5.7 11.5 31.5 9.7 9.3 0.6 3.6 15.2 6.3 nS nS nS nS nC nC nC nS nC Clss Coss Crss VDS=10V,VGS=0V, F=1.0MHz 630 160 135 PF PF PF gFS VDS=5V,ID=7A 0.5 0.8 16.4 19 21.7 25 36 24 1 21 24 28 32 50 S mΩ V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF8822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF8822 TSSOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF8822 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0