SSF9926

SSF9926 DESCRIPTION The SSF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 44mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF9926 Device SSF9926 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±10 6 24 2 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=20V,VGS=0V Min 20 Typ Max Unit V 1 μA ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF9926 Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.7A 1 1.2 V td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=3A,VGS=4.5V VDS=10V,VGS=4.5V,RGEN=6Ω ID=1A 9.6 6.5 28 6 6 1.5 1.5 nS nS nS nS nC nC nC Clss Coss Crss VDS=8V,VGS=0V, F=1.0MHz 550 140 120 PF PF PF VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=5V,ID=4.5A 0.6 0.75 22.5 32 18 1 28 44 V mΩ mΩ S IGSS VGS=±10V,VDS=0V ±100 nA NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF9926 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1: Switching Test Circuit Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistance Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF9926 SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF9926 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0