SLCD-61N8

SLCD-61N8 Solderable Planar Photodiode Features • • • • • • Visible to IR spectral irradiance range High reliability Oxide passivation Linear short circuit current Low capacitance, high speed Available in arrays where # indicates number of elements ( maximum of 8 elements ) 0.4 3.4 1.3 Cathode Sensitive Area (2.7 sq. mm.) Anode Description The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance and relatively high shunt impedances, and stability. These devices also provide a reliable, inexpensive detector for applications such as light beam sensing and instrumentation. The electrical characteristics below are per element. In the multielement arrays the cathodes are common to a all elements. Dimensions in mm. (+/- 0.13) Also available with leads as part number SLSD-71N8 Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 Half Angle = 60° 60° 0.6 0.4 70° 80° 90° 100° 0.2 0.0 Absolute Maximum Ratings Storage Temperature Operating Temperature -40°C to +125°C -40°C to +125°C 1.0 0.8 0.6 0.4 20° 40° 60° 80° 100° 120° Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min ISC Short Circuit Current 100 VOC Open Circuit Voltage ID Reverse Dark Current CJ Junction Capacitance Spectral Sensitivity Sλ VBR Reverse Breakdown Voltage 20 Maximum Sensitivity Wavelength λP Sensitivity Spectral Range 400 λR Acceptance Half Angle θ1/2 Specifications subject to change without notice Notes: (1) Ee = light source @ 2854 °K Typ 170 0.40 100 0.55 930 1100 60 Max Units µA V µA pF A/W V nm nm deg Test Conditions 2 VR=0V, Ee=25mW/cm (1) 2 Ee=25mw/cm (1) VR=5V, Ee=0 VR=0V, Ee=0, f=1MHz λ=940nm IR=100µA 1.7 104118 REV 0