SLD-68EBG1

SLD-68EBG1 Integral Infrared Rejection Filter Planar Photodiode Features • Planar Photodiode • Integral IR Rejection Filter • Low capacitance • Fast switching time • Low leakage current • Linear response vs irradiance • TO-46 base with epoxy dome lens • Multiple dark current ranges available Description This planar, passivated silicon photodiode is designed to maximize response in the visible light spectrum of received energy. This diode incorporates a BG filter that rejects infrared wavelengths and approximates the response of the human eye. Photodiodes may operate in either photovoltaic or reverse bias mode to provide low capacitance with fast switching speed. It provides excellent linearity in output signal versus light intensity. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (3) -20°C to +75°C -20°C to +75°C 260°C 45° ø 5.3 25.4 Min. 3.0 4.2 0.50-0.52 Epoxy 2.5 Filter Chip Anode + Cathode (Common to case) Dimensions in mm. (+/- 0.13) Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 0.6 0.4 0.2 0.0 Half Angle = 40° 60° 70° 80° 90° 100° 1.0 0.8 0.6 0.4 20° 40° 60° 80° 100° 120° Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter MIN TYP ISC Short Circuit Current 7.5 11.0 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current: SLD-68EBG1A SLD-68EBG1B SLD-68EBG1C SLD-68EBG1D SLD-68EBG1E CJ Junction Capacitance 40 tR Rise Time 1.0 tF Fall Time 1.5 TCI Temp. Coef., ISC +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 550 λP Sensitivity Spectral Range 400 λR Acceptance Half Angle 40 θ1/2 Notes: (1) Ee = light source @ 2854 °K (2) Ee = Light source @ λ = 580 nm (3) >2 mm from case for