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SLSD-71N8

SLSD-71N8

  • 厂商:

    SILONEX

  • 封装:

  • 描述:

    SLSD-71N8 - Solderable Planar Photodiode - Silonex Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
SLSD-71N8 数据手册
SLSD-71N8 SLSD-71N8 / # Solderable Planar Photodiode Features • • • • • • • Visible to IR spectral irradiance range High reliability Oxide passivation Linear short circuit current Low capacitance, high speed Protective coating Available in arrays where # indicates number of elements ( maximum of 8 elements ) 0.8 3.4 1.3 #32 AWG Wire Sensitive Area (2.7 sq. mm.) Dimensions in mm. -Blk (Cathode) 150 nom 4.8 Nom. +Red (Anode) Description The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance and relatively high shunt impedance, stability, and humidity characteristics. These devices also provide a reliable, inexpensive detector for applications such as light beam sensing and instrumentation. The electrical characteristics below are per element. In the multielement arrays the cathodes are common to a single cathode wire. Also available without leads as part number SLCD-61N8 Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 Half Angle = 60° 60° 0.6 0.4 70° 80° 90° 100° 1.0 0.8 0.6 0.4 0.2 0.0 20° 40° 60° 80° 100° 120° Absolute Maximum Ratings Storage Temperature Operating Temperature -40°C to +105°C -40°C to +105°C Min 100 Typ 170 0.40 100 0.55 20 930 400 60 Units Test Conditions 2 VR=0V, Ee=25mW/cm (1) µA 2 V Ee=25mw/cm (1) 1.7 VR=5V, Ee=0 µA pF VR=0V, Ee=0, f=1MHz A/W λ=940nm V IR=100µA nm 1100 nm deg Specifications subject to change without notice 103193 REV 2 Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter ISC Short Circuit Current VOC Open Circuit Voltage ID Reverse Dark Current CJ Junction Capacitance Spectral Sensitivity Sλ VBR Reverse Breakdown Voltage Maximum Sensitivity Wavelength λP Sensitivity Spectral Range λR Acceptance Half Angle θ1/2 Notes: (1) Ee = light source @ 2854 °K Max 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554
SLSD-71N8
物料型号: - SLSD-71N8

器件简介: - 该系列产品为硅平面可焊光电二极管,具有低成本、高可靠性以及在宽范围照明下的线性短路电流特性。广泛应用于光感和能量转换,因其稳定性和高效率而受到青睐。特别适用于功率转换应用,因为它们具有低内阻和相对较高的漏电流阻抗、稳定性和湿度特性。这些设备还提供了一个可靠的、廉价的探测器,适用于光束感应和仪器仪表等应用。

引脚分配: - 在多元素阵列中,阴极是共用的,连接到单个阴极线。

参数特性: - 短路电流(Isc):100至170微安 - 开路电压(Voc):0.40伏特 - 反向暗电流(ID):1.7微安 - 结电容(C):100皮法 - 光谱灵敏度(Sh.):在940纳米处为0.55A/W - 反向击穿电压(VBR):20伏特 - 最大灵敏度波长(Ap):930纳米 - 灵敏度光谱范围(AR):400至1100纳米 - 接受半角(01/2):60度

功能详解: - 这些设备在可见光到红外光谱辐照范围内工作,具有高可靠性和氧化物钝化特性,线性短路电流和低电容、高速特性。它们还具有保护涂层,并可提供最多8个元素的阵列。

应用信息: - 用于光感和能量转换,特别适用于功率转换应用,以及光束感应和仪器仪表等应用。

封装信息: - 提供了无引脚版本,型号为SLCD-61N8。
SLSD-71N8 价格&库存

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