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SP6645EU

SP6645EU

  • 厂商:

    SIPEX(迈凌)

  • 封装:

  • 描述:

    SP6645EU - Single/Dual Alkaline Cell, High Efficiency Boost DC-DC Regulator - Sipex Corporation

  • 数据手册
  • 价格&库存
SP6645EU 数据手册
® SP6644/6645 Single/Dual Alkaline Cell, High Efficiency Boost DC-DC Regulator ■ 90mA Output Current at 1.3V Input ■ 190mA Output Current at 2.6V Input ■ +2V to +5.5V Output Range ■ 0.88V Guaranteed Start-Up ■ 92% High Efficiency ■ 1.6µA Quiescent Supply Current at VBATT ■ Reverse Battery Protection ■ Internal Synchronous Rectifier ■ 5nA Logic Controlled Shutdown Current From VBATT ■ Low-Battery Detection Active LOW Output ■ Small 8 Pin MSOP Package ■ Flexibility to Optimize Inductor Type with Programmable Peak Current Control ■ No External FETs V B AT 1 B AT T L 0 2 RLIM 3 SHDN 4 SP6644 SP6645 8 Pin MSOP 8 V OUT 7 LX 6 GND 4 FB DESCRIPTION The SP6644/6645 devices are high-efficiency, low-power step-up DC-DC converters ideal for single or dual alkaline cell applications such as pagers, remote controls, pointing devices, medical monitors, and other low-power portable end products. Designers can control the SP6644 device with an active LOW shutdown input. The SP6644 device features an active low output for batteries below +1.0V. The SP6645 device features an active low output for batteries below +2.0V. Both devices contain a 0.8Ω synchronous rectifier, a 0.5Ω N-channel MOSFET power switch, an internal voltage reference, circuitry for pulsefrequency-modulation, and an under voltage comparator. The output voltage for the SP6644/6645 devices is preset to +3.3V + 4% or can be adjusted from +2V to +5.5V by manipulating two external resistors TYPICAL APPLICATION CIRCUIT 22µH 0.7A 0.88V to 3.3V Input 47µF RLIM VBATT LX VOUT +3.3VOUT SP6644 SP6645 47µF BATTLO SHDN GND FB Rev:B Date 4/13/04 SP6644/6645 High Efficiency Boost Regulator © Copyright 2004 Sipex Corporation 1 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VBATT to GND.............................................-0.3 to 6.0V VOUT to GND..............................................-0.3 to 6.0V LX, SHDN, FB, BATTLO, to GND.............-0.3 to 6.0V Reverse battery Current, TAMB=+25˚C.............220mA (NOTE 1) VBATT forward current............................................0.5A VOUT, LX current......................................................1A Storage Temperature Range............-65˚C to +165˚C Lead Temperature (soldering 10s)..................+300˚C Operating Temperature.......................-40˚C to +85˚C Power Dissipation Per Package 8-pin µSOIC (derate 4.85mW/OC above +70OC)..........390mW ELECTRICAL CHARACTERISTICS VBATT = VSHDN = 1.3V, ILOAD = 0mA, FB = GND, TAMB = -40 C to +85 C, and typical values are at TAMB = +25oC unless otherwise noted. o o PARAMETER Maximum Operating Input Voltage, VBATT(MAX) Start-Up Input Voltage, VBATT Start-Up Input Voltage, VBATT Temperature Coefficient SHDN Input Voltage VIL VIH SHDN Input Current FB Input Current FB Set Voltage, VFB BATTLO Falling Trip Voltage Output Voltage, VOUT Output Voltage Range N-Channel On-Resistance P-Channel On-Resistance MIN. TYP. MAX. 3.3 UNITS V V mVºC ♦ ♦ ♦ RL = 3kΩ, CONDITIONS 0.82 -1 1.1 15 80 1 1 1.215 0.94 1.88 3.16 2. 0 0.5 0.8 1.262 1.00 2.00 3.30 100 10 0 1.309 1.06 2.12 3.44 5.5 1.0 1.6 % nA nA V V V V Ω Ω ♦ ♦ ♦ ♦ ♦ ♦ % of VBATT % of VBATT VFB =1.3V, external feedback SP6644, VOUT = 3.3V SP6645, VOUT = 3.3V VFB
SP6645EU 价格&库存

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