SP6661UEB

SP6661 High Frequency 200mA Charge Pump Inverter or Doubler ■ Inverts or Doubles Input Supply Voltage 8 V+ FC 1 ■ 92% Power Efficiency at 100mA ■ 120kHz/900kHz Selectable Oscillator FreSP6661 CAP+ 2 7 OSC quency 6 LV ■ 4.5Ω Output Resistance Using 3.3µF Ceramic GND 3 8 Pin nSOIC Caps 5 OUT CAP- 4 ■ Low Voltage Battery Operation ■ Ideal for 3.6V Lithium Ion Battery or 5.0V Input ■ High Output Current – 200mA Now Available in Lead Free Packaging ■ Low Profile Solution ■ 1.5V Inverter Startup Guaranteed ■ Pin-Compatible High-Current Upgrade of the ICL7660 and 660 Industry Standard ■ Smallest Package Available for the 660 Industry Standard – 8 pin µSOIC DESCRIPTION The SP6661 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -5.0V output can be converted from a +1.5V to +5.0V input. As a Voltage Doubler, a +5.0V to +10.0V output can be provided from a +2.5V to +5.0V input. The SP6661 is ideal for both battery-powered and board level voltage conversion applications with a typical operating current of 3mA and a high efficiency (>90%) over most of its load-current range. Typical end products for this device are disk drive supplies, operational amplifier and interface power supplies, medical instruments, and hand held and laptop computers. The SP6661 is available in 8-pin NSOIC, and µSOIC packages. +VIN +2.5V to +5.0V ® FC CAP+ GND C1 1µF to 22µF CAP- 1 +V 8 +VIN +1.5V to +5.0V C3 1µF to 22µF 2 3 SP6661 7 6 OSC LV C3 1µF to 22µF FC CAP+ 1 ® +V 8 DOUBLE NEGATIVE VOLTAGE OUTPUT 4 5 OUT INVERTED NEGATIVE VOLTAGE OUTPUT 2 3 SP6661 7 OSC LV GND C1 1µF to 22µF CAP- C2 1µF to 22µF 6 C2 1µF to 22µF 4 5 OUT Figure 1: Voltage Inverter Date: 05/25/04 Figure 2: Voltage Doubler SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 1 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. Power Supply Voltage (V+ to GND or GND to OUT).............................+5.6V LV Input Voltages............(OUT - 0.3V) to (V+ + 0.3V) FC and OSC Input Voltages......The least negative of (OUT - 0.3V) or (V+ - 5.6V) to (V+ + 0.3V) OUT and V+ Continuous Output Current.........200mA Output Short-Circuit Duration to GND (Note 1).......1s Operating Temperature Ranges SP6661E_...........................-40˚C to +85˚C Continuous Power Dissipation (TAMB = 70˚C) NSOIC (derate 5.88mW/˚C above +70˚C).......471mW µSOIC (derate 4.10mW/˚C above +70˚C)........330mW Operating Temperature.......................-40˚C to +85˚C Storage Temperature........................-65˚C to +150˚C Lead Temperature (soldering 10s)..................+300˚C SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS CONDITIONS Inverter Circuit at Low Frequency with 22µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit. Note 2 Supply Voltage Range Start-Up Voltage Supply Current Max Output Current Oscillator Input Current Oscillator Frequency Output Resistance Voltage Conversion Efficiency Power Efficiency 99.0 80 70 70 200 ±1 120 5 99.9 89 82 170 7 1.5 0.93 3 6 5.3 V V mA mA µA kHz Ω % % IL = 100mA, Note 3 No Load IL = 100mA IL = 200mA No Load RL = 500Ω Doubler Circuit at Low Frequency with 22µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 22 test circuit. Note 2 Supply Voltage Range Start-Up Voltage Supply Current Max Output Current Oscillator Input Current Oscillator Frequency Output Resistance Voltage Conversion Efficiency Power Efficiency 99.0 89 79 70 200 ±1 120 4.5 99.9 94 90 170 7 2.5 1.5 3 6 5.3 V V mA mA µA kHz Ω % % IL = 100mA, Note 3 No Load IL = 100mA IL = 200mA No Load RL = 1kΩ Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 2 SPECIFICATIONS (continued) PARAMETER MIN. TYP. MAX. UNITS CONDITIONS Inverter Circuit at High Frequency with 3.3µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit. Note 2 Supply Voltage Range Start-Up Voltage Supply Current Max Output Current Oscillator Input Current Oscillator Frequency Output Resistance Voltage Conversion Efficiency Power Efficiency 99.0 78 65 500 200 ±8 900 5 99.6 84 79 1250 7 1.5 0.93 10 18 5.3 V V mA mA µA kHz Ω % % IL = 100mA, Note 3 No Load IL = 100mA IL = 200mA No Load RL = 500Ω Doubler Circuit at High Frequency with 3.3µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 2 test circuit. Note 2 Supply Voltage Range Start-Up Voltage Supply Current Max Output Current Oscillator Input Current Oscillator Frequency Output Resistance Voltage Conversion Efficiency Power Efficiency 99.0 87 79 500 200 ±8 900 4.5 99.9 92 89 1250 7 2.5 1.5 10 18 5.3 V V mA mA µA kHz Ω % % IL = 100mA, Note 3 No Load IL = 100mA IL = 200mA No Load RL = 1kΩ NOTE 1: Specified output resistance is a combination of internal switch resistance and capacitor ESR. NOTE 2: In the test circuit capacitors C1, C2 and C3 are 22µF, 0.05 maximum ESR, ceramic or 3.3µF, 0.05Ω maximum ESR, ceramic. Capacitors with higher ESR may reduce output voltage and efficiency. Refer to Capacitor Selection section. NOTE 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. Refer to Optimizing Capacitor Selection. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 3 Optimizing Capacitor Selection Refer to Figure 1 for the total output resistance for various capacitance values and oscillator frequencies. The reservoir and charge pump capacitor values are equal. The capacitance values required to maintain comparable ripple and output resistance typically diminish proportionately as the pump frequency of the SP6661 increases. Total Output Source Resistance Vs C1, C2 20 18 16 14 12 10 8 6 4 2 0 1 10 100 1000 C1, C2 Capacitance (uF) 10KHz 20KHz 50KHz 100KHz 200KHz 500KHz 1000KHz Figure 1. Total Output Resistance for various capacitance values and oscillator frequencies. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 4 PINOUT FC 1 CAP+ 2 GND 3 CAP- 4 SP6661 ® 8 V+ 7 OSC 6 LV 5 OUT PIN ASSIGNMENTS Pin Number Pin Symbol 1 2 3 3 4 5 5 6 FC CAP+ GND GND CAPOUT OUT LV Description Frequency Control for the internal oscillator. FC = open, fosc = 120kHz typical; FC = V+ fosc = 900kHz typical. Connect to the positive terminal of the charge pump capacitor. (Voltage Inverter Circuit) Ground. (Positive Voltage Doubler Circuit) Positive supply voltage input. Connect to the negative terminal of the charge pump capacitor. (Voltage Inverter Circuit) Negative voltage output pin. (Positive Voltage Doubler Circuit) Ground pin for power supply. Low -voltage operation input pin in 660 circuits. In SP6661 circuits can be connected to GND, OUT or left open as desired with no effect. Control pin for the oscillator. Internally connected to 15pF capacitor. An external capacitor can be added to slow the oscillator. Be careful to minimize stray capacitance. An external oscillator can be connected to overdrive the OSC pin. (Voltage Inverter Circuit) Positive voltage input pin for the power supply. (Positive Voltage Doubler Circuit) Positive voltage output. 7 OSC 8 8 V+ V+ Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 5 All package dimensions in inches 0.189/0.197 0.150/0.157 0.228/0.244 0.053/0.069 0.0256 BSC 0.012 ±0.003 12.0˚ ±4˚ 0.008 0˚ - 6˚ 0.006 ±0.006 0.006 ±0.006 0.014/0.019 0.050 BSC 0.0965 ±0.003 0.118 ±0.004 1 2 0.020 0.020 1 2 R .003 0.16 ±0.003 12.0˚ ±4˚ 0.01 0.0215 ±0.006 0.037 Ref 3.0˚ ±3˚ 2 0.116 ±0.004 0.034 ±0.004 0.040 ±0.003 0.116 ±0.004 0.013 ±0.005 0.118 ±0.004 0.004 ±0.002 0.118 ±0.004 100 die per waffle pack 95 NSOIC devices per tube, no minimum quantity 50 µSOIC devices per tube P W 8-pin NSOIC 13” reels: P = 8mm, W = 12mm pkg CN CU min qty per reel 500 500 std qty per reel 1500 1500 max qty per reel 2500 3000 Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 6 ORDERING INFORMATION Part Number Temperature Range Package Type SP6661EN . ............................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC SP6661EN/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC SP6661EU . ............................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC SP6661EU/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC SP6661UEB ................................................................................... 8-Pin µSOIC Evaluation Board Available in lead free packaging. To order add "-L" suffix to part number. Example: SP6661EN/TR = standard; SP6661EN-L/TR = lead free /TR = Tape and Reel Pack quantity is 2500 for NSOIC. ANALOG EXCELLENCE Sipex Corporation Headquarters: 233 Hillview Dr Milpitas, CA 95035 TEL: (408) 934-7500 FAX: (408) 935-7600 Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation 7