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SP784CP

SP784CP

  • 厂商:

    SIPEX(迈凌)

  • 封装:

  • 描述:

    SP784CP - Programmable Charge Pump - Sipex Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
SP784CP 数据手册
® SP782/784 Programmable Charge Pump s +5V Only Low Power Voltage Conversion s Programmable Between ±5V or ±10V s Low Power Shutdown Mode Applications s RS-232/RS-423 transceiver power supplies s LCD BIAS Generator s OP-Amp Power Supplies DESCRIPTION... The SP782 and SP784 are monolithic programmable voltage converters that produce a positive and negative voltage from a single supply. The SP782 and SP784 are programmable such that the charge pump outputs either a ±10V voltage or a ±5V voltage by control of two pins. Both products require four (4) charge pump capacitors to support the resulting output voltages. The charge pump architecture (U.S. 5,760,637) is fabricated using a low power BiCMOS process technology. The SP782 and SP784 charge pumps can be powered from a single +5V supply. The low power consumption makes these charge pumps ideal for battery operated equipment. Both offer a shutdown feature that saves battery life. A system can essentially have four (4) different supply voltages from a single battery. Typical applications are handheld instruments, notebook and laptop computers, and data acquisition systems. +5V 10µF + +5V 13 14 C1+ C1– C2+ (b) C2+ (a) C2– D0 D1 LATCH SD GND 16 4 VCC 10µF 10µF + 10µF 1µF 1 12 5 6 14 1µF 1 12 5 1µF 3 LATCH C1+ C1– C2+ C2+ C2– GND 16 4 13 15 VDD 11 VCC SD VDD 11 10µF 3 SP784 SP782 VSS D0 9 D1 8 2 1µF 9 8 6 15 VSS 2 10µF SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 1 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VCC...........................................................................+7V VDD.........................................................................+11V VSS.........................................................................–11V Storage Temperature..........................-65˚C to +150˚C Power Dissipation 16-pin Plastic DIP...........................1000mW 16-pin Plastic SOIC.........................1000mW Package Derating: 16-pin Plastic DIP øJA....................................................62 °C/W 16-pin Plastic SOIC øJA....................................................62 °C/W SP782 SPECIFICATIONS Typical @ 25°C and VCC = VCC ± 5% unless otherwise noted. MIN. SUPPLY CURRENT ICC Shutdown ICC POSITIVE CHARGE PUMP OUTPUT VDD (2xVCC Output) +9.5 +8.0 VDD (VCC Output) +4.2 +4.2 NEGATIVE CHARGE PUMP OUTPUT VSS (2xVCC Output) –9.5 –8.0 VSS (–VCC Output) –4.2 –4.0 OSCILLATOR FREQUENCY fOSC VOLTAGE CONVERSION EFFICIENCY 95 VDD (2X VCC Output) VDD (2X VCC Output) 80 VSS (2X VCC Output) 85 VSS (2X VCC Output) 80 POWER REQUIREMENTS VCC +4.75 ENVIRONMENTAL AND MECHANICAL Operating Temperature Range 0 Storage Temperature Range –65 TYP. 3 1 10 +9.8 +8.5 +4.5 +4.5 MAX. 8 2 25 +10.0 UNITS mA mA µA Volts Volts CONDITIONS VCC = +5V, RL = ∞, VO = 2xVCC VCC = +5V, RL = ∞, VO = VCC VCC = +5V, SD = VCC CHARGE PUMP CAPACITORS: 1µ F CHARGE PUMP CAPACITORS: 1µF +5.0 Volts Volts VCC = +5V, D0 = 0V, D1 = 0V RL = ∞ VCC = +5V, D0 = 0V, D1 = 0V RL = 1kΩ VCC = +5V, D0 = VCC, D1 = VCC RL = ∞ VCC = +5V, D0 = VCC, D1 = VCC RL = 1kΩ CHARGE PUMP CAPACITORS: 1µ F –9.8 –8.5 –4.5 –4.2 –10.0 Volts Volts –5.0 Volts Volts VCC = +5V, D0 = 0V, D1 = 0V RL = ∞ VCC = +5V, D0 = 0V, D1 = 0V RL = 1kΩ VCC = +5V, D0 = VCC, D1 = VCC RL = ∞ VCC = +5V, D0 = VCC, D1 = VCC RL = 1kΩ SD = 0V 300 kHz 98 85 90 85 +5.25 +70 +150 % % % % Volts °C °C RL = ∞ RL = 1kΩ RL = ∞ RL = 1kΩ SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 2 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VCC...........................................................................+7V VDD.........................................................................+11V VSS.........................................................................–11V Storage Temperature..........................-65˚C to +150˚C Power Dissipation 16-pin Plastic DIP...........................1000mW 16-pin Plastic SOIC.........................1000mW Package Derating: 16-pin Plastic DIP øJA....................................................62 °C/W 16-pin Plastic SOIC øJA....................................................62 °C/W SP784 SPECIFICATIONS Typical @ 25°C and VCC = VCC ± 5% unless otherwise noted. MIN. SUPPLY CURRENT ICC Shutdown ICC POSITIVE CHARGE PUMP OUTPUT VDD (2xVCC Output) +9.0 +8.0 VDD (VCC Output) +4.5 +4.2 NEGATIVE CHARGE PUMP OUTPUT VSS (2xVCC Output) –9.0 –8.0 VSS (–VCC Output) –4.2 –4.0 OSCILLATOR FREQUENCY fOSC VOLTAGE CONVERSION EFFICIENCY VDD (2X VCC Output) 90 VDD (2X VCC Output) 80 VSS (2X VCC Output) 90 VSS (2X VCC Output) 80 POWER REQUIREMENTS VCC +4.75 ENVIRONMENTAL AND MECHANICAL Operating Temperature Range 0 Storage Temperature Range –65 TYP. 5 1 10 +9.8 +9.5 +4.8 +4.5 MAX. 10 5 25 +10.0 UNITS mA mA µA Volts Volts CONDITIONS VCC = +5V, RL = ∞, VO = 2xVCC VCC = +5V, RL = ∞, VO = VCC VCC = +5V, SD = VCC CHARGE PUMP CAPACITORS: 10µ F CHARGE PUMP CAPACITORS: 10µ F +5.0 Volts Volts VCC = +5V, D0 = 0V, D1 = 0V RL = ∞ VCC = +5V, D0 = 0V, D1 = 0V RL = 1kΩ VCC = +5V, D0 = VCC, D1 = VCC RL = ∞ VCC = +5V, D0 = VCC, D1 = VCC RL = 1kΩ CHARGE PUMP CAPACITORS: 10µ F –9.8 –9.5 –4.5 –4.2 –10.0 Volts Volts –5.0 Volts Volts VCC = +5V, D0 = 0V, D1 = 0V RL = ∞ VCC = +5V, D0 = 0V, D1 = 0V RL = 1kΩ VCC = +5V, D0 = VCC, D1 = VCC RL = ∞ VCC = +5V, D0 = VCC, D1 = VCC RL = 1kΩ SD = 0V 300 kHz 98 95 98 95 +5.25 +70 +150 % % % % Volts °C °C RL = ∞ RL = 1kΩ RL = ∞ RL = 1kΩ SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 3 AC CHARACTERISTICS* (Typical @ 25°C and nominal supply voltages unless otherwise noted) PARAMETER MIN. SP782 POWER-UP DELAY TIME ± 10V OUTPUT tDVDD; VDD Power On Delay tDVSS; VSS Power-On Delay ± 5V OUTPUT tDVDD; VDD Power On Delay tDVSS; VSS Power-On Delay SP782 OUTPUT DELAY TIME tSD1; Switching Delay from ±10V to ±5V tSD2; Switching Delay from ±5V to ±10V SP784 POWER-UP DELAY TIME ± 10V OUTPUT tDVDD; VDD Power On Delay tDVSS; VSS Power-On Delay ± 5V OUTPUT tDVDD; VDD Power On Delay tDVSS; VSS Power-On Delay SP784 OUTPUT DELAY TIME tSD1; Switching Delay from ±10V to ±5V tSD2; Switching Delay from ±5V to ±10V TYP. MAX. UNITS CONDITIONS 1000 1000 µs µs µs µs RL = 1kΩ RL = 1kΩ RL = 1kΩ RL = 1kΩ 10 150 1000 500 µs µs RL = 1kΩ RL = 1kΩ 5 5 ms ms RL = 1kΩ RL = 1kΩ RL = 1kΩ RL = 1kΩ 10 1000 µs µs 10 2 ms ms RL = 1kΩ RL = 1kΩ * - Using the charge pump capacitor values specified in the previous pages for each device. +10V C2+ GND GND C2– –10V (b) (a) +5V C2+ GND GND C2– –5V Figure 1. Charge Pump Waveforms SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 4 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 5.00 SP782 VDD vs IDD D0 = D1 = 0V VCC = 5.00V T = +25 C O IDD(milliamps) 10uF Curve 1uF Curve 0.1uF Curve 5.50 6.00 6.50 7.00 7.50 VDD(volts) 8.00 8.50 9.00 9.50 10.00 SP782 VSS vs ISS 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -10.00 D0 = D1 = 0V VCC = 5.00V T = +25 C O ISS(milliamps) 10uF Curve 1uF Curve 0.1uF Curve -9.50 -9.00 -8.50 -8.00 -7.50 -7.00 -6.50 -6.00 -5.50 -5.00 VSS(volts) SP782 LOAD vs VDD 10.00 9.00 8.00 7.00 6.00 5.00 4.00 0 500 1000 1500 VDD (volts) D0 = D1 = 0V VCC = 5.00V T = +25 C O VDD - 10uF VDD - 1uF VDD - 0.1uF 2000 2500 3000 3500 4000 4500 5000 LOAD (ohms) SP782 LOAD vs VSS -4.00 -5.00 -6.00 -7.00 -8.00 -9.00 -10.00 0 500 1000 1500 VSS (volts) D0 = D1 = 0V VCC = 5.00V T = +25 C O VSS - 10uF VSS - 1uF VSS - 0.1uF 2000 2500 3000 3500 4000 4500 5000 LOAD(ohms) SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 5 SP782 VDD vs IDD D0 = D1 = 5V VCC = 5.00V T = +25 C 40.00 10uF Curve 35.00 1uF Curve 30.00 0.1uF Curve 25.00 20.00 15.00 10.00 5.00 0.00 4.25 4.20 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 VDD(volts) O IDD(milliamps) SP782 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 -4.40 VSS vs ISS D0 = D1 = 5V VCC = 5.00V T = +25 C O ISS(milliamps) 10uF Curve 1uF Curve 0.1uF Curve -4.30 -4.20 -4.10 -4.00 -3.90 -3.80 VSS(volts) -3.70 -3.60 -3.50 SP782 4.50 4.40 4.30 4.20 4.10 4.00 VDD (volts) LOAD vs VDD D0 = D1 = 5V VCC = 5.00V T = +25 C O VDD - 10uF VDD - 1uF VDD - 0.1uF 0 500 1000 1500 2000 2500 3000 LOAD(ohms) 3500 4000 4500 5000 SP782 -4.00 -4.10 -4.20 -4.30 -4.40 -4.50 VSS (volts) LOAD vs VSS D0 = D1 = 5V VCC = 5.00V T = +25 C O VSS - 10uF VSS - 1uF VSS - 0.1uF 0 500 1000 1500 2000 2500 3000 LOAD(ohms) 3500 4000 4500 5000 SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 6 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 5.00 SP784 VDD vs IDD D0 = D1 = 0V VCC = 5.00V T = +25 C O IDD(milliamps) 10uF Curve 1uF Curve 0.1uF Curve 5.50 6.00 6.50 7.00 7.50 VDD(volts) 8.00 8.50 9.00 9.50 10.00 SP784 VSS vs ISS 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -10.00 ISS(milliamps) D0 = D1 = 0V VCC = 5.00V T = +25 C O 10uF Curve 1uF Curve 0.1uF Curve -9.50 -9.00 -8.50 -8.00 -7.50 -7.00 VSS(volts) -6.50 -6.00 -5.50 -5.00 SP784 LOAD vs VDD 10.00 9.00 8.00 7.00 6.00 5.00 4.00 0 500 1000 1500 VDD (volts) D0 = D1 = 0V VCC = 5.00V T = +25 C O VDD - 10uF VDD - 1uF VDD - 0.1uF 2000 2500 3000 LOAD(ohms) 3500 4000 4500 5000 SP784 LOAD vs VSS -4.00 -5.00 -6.00 -7.00 -8.00 -9.00 -10.00 0 500 1000 1500 VSS (volts) D0 = D1 = 0V VCC = 5.00V T = +25 C O VSS - 10uF VSS - 1uF VSS - 0.1uF 2000 2500 LOAD(ohms) 3000 3500 4000 4500 5000 SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 7 SP784 VDD vs IDD D0 = D1 = 5V VCC = 5.00V T = +25 C 40.00 10uF Curve 35.00 1uF Curve 30.00 0.1uF Curve 25.00 20.00 15.00 10.00 5.00 0.00 4.25 4.20 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 VDD(volts) O IDD(milliamps) SP784 VSS vs ISS D0 = D1 = 5V VCC = 5.00V T = +25 C 0.00 10uF Curve -5.00 1uF Curve -10.00 0.1uF Curve -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -4.40 -4.30 -4.20 -4.10 -4.00 -3.90 -3.80 -3.70 -3.60 -3.50 VSS(volts) O ISS(milliamps) SP784 LOAD vs VDD 4.50 4.40 4.30 4.20 4.10 4.00 0 500 1000 1500 VDD (volts) D0 = D1 = 5V VCC = 5.00V T = +25 C O VDD - 10uF VDD - 1uF VDD - 0.1uF 2000 2500 LOAD(ohms) 3000 3500 4000 4500 5000 SP784 LOAD vs VSS -4.00 -4.10 -4.20 -4.30 -4.40 -4.50 VSS (volts) D0 = D1 = 5V VCC = 5.00V T = +25 C O VSS - 10uF VSS - 1uF VSS - 0.1uF 0 500 1000 1500 2000 2500 LOAD(ohms) 3000 3500 4000 4500 5000 SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 8 THEORY OF OPERATION The SP782/784's charge pump design is based on Sipex's original patented charge pump design (5,306,954) which uses a four–phase voltage shifting technique to attain symmetrical 10V power supplies. In addition, the SP782/ 784 charge pump incorporates a "programmable" feature that produces an output of ±10V or ±5V for VSS and VDD by two control pins, D0 and D1. The charge pump requires external capacitors to store the charge. Figure 1 shows the waveform found on the positive and negative side of capcitor C2. There is a free–running oscillator that controls the four phases of the voltage shifting. A description of each phase follows. Phase 1 (± 10V) — VSS charge storage — During this phase of the clock cycle, the positive side of capacitors C1 and C2 are initially charged to +5V. Cl+ is then switched to ground and the charge on C1– is transferred to C2–. Since C2+ is connected to +5V, the voltage potential across capacitor C2 is now 10V. Phase 1 (± 5V) — VSS & VDD charge storage and transfer — With the C1 and C2 capacitors initially charged to +5V, Cl+ is then switched to ground and the charge on C1– is transferred to the VSS storage capacitor. Simultaneously the C2– is switched to ground and 5V charge on C2+ is transferred to the VDD storage capacitor. Phase 2 (± 10V) — VSS transfer — Phase two of the clock connects the negative terminal of C2 to the VSS storage capacitor and the positive terminal of C2 to ground, and transfers the generated –l0V or the generated –5V to C3. Simultaneously, the positive side of capacitor C 1 is switched to +5V and the negative side is connected to ground. Phase 2 (± 5V) — VSS & VDD charge storage — C 1+ is reconnected to V CC t o recharge the C 1 capacitor. C2+ is switched to ground and C2– is connected to C3. The 5V charge from Phase 1 is now transferred to the VSS storage capacitor. VSS receives a continuous charge from either C1 or C2. With the C1 capacitor charged to 5V, the cycle begins again. Phase 3 — VDD charge storage — The third phase of the clock is identical to the first phase — the charge transferred in C1 produces –5V in the negative terminal of C1, which is applied to the negative side of capacitor C2. Since C2+ is at +5V, the voltage potential across C2 is l0V. For the 5V output, C2+ is connected to ground so that the potential on C2 is only +5V. Phase 4 — VDD transfer — The fourth phase of the clock connects the negative terminal of C2 to ground and transfers the generated l0V or the generated 5V across C2 to C4, the VDD storage capacitor. Again, simultaneously with this, the positive side of capacitor C1 is switched to +5V and the negative side is connected to ground, and the cycle begins again. Since both VDD and VSS are separately generated from VCC in a no–load condition, VDD and VSS will be symmetrical. Older charge pump approaches that generate V– from V+ will show a decrease in the magnitude of V– compared to V+ due to the inherent inefficiencies in the design. VCC = +5V +5V C1 + – C4 + – C2 –5V + – VDD Storage Capacitor – + VSS Storage Capacitor –5V C3 Figure 2. Charge Pump Phase 1 for ±10V. VCC = +5V +5V C1 + – C4 + – C2 + – VDD Storage Capacitor –5V – + VSS Storage Capacitor C3 Figure 3. Charge Pump Phase 1 for ±5V. SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 9 VCC = +5V VCC = +5V C4 + – C4 C1 + – C2 + – VDD Storage Capacitor C1 + + – – C2 + – VDD Storage Capacitor –10V – + VSS Storage Capacitor –5V – + VSS Storage Capacitor C3 C3 Figure 4. Charge Pump Phase 2 for ±10V. VCC = +5V Figure 5. Charge Pump Phase 2 for ±5V. VCC = +5V +5V C1 + – C4 + – +10V C4 + – C2 –5V + – VDD Storage Capacitor C1 + – C2 + – VDD Storage Capacitor – + VSS Storage Capacitor – + VSS Storage Capacitor –5V C3 C3 Figure 6. Charge Pump Phase 3. Figure 7. Charge Pump Phase 4. The oscillator frequency or clock rate for the charge pump is designed for low power operation. The oscillator changes from a high frequency mode (400kHz) to a low frequency mode (20kHz) when the SD pin goes to a logic "1". The lower frequency allows the SP782/ SP784 to conserve power when the outputs are not being used. EFFICIENCY INFORMATION A charge pump theoretically produces a doubled voltage at 100% efficiency. However in the real world, there is a small voltage drop on the output which reduces the output efficiency. The SP782 and SP784 can usually run 99.9% efficient without driving a load. While driving a 1k Ω load, the SP782 and SP784 remain at least 90% efficient. Total Output Voltage Efficiency = [(VOUT+) / (2*VCC)] + [(VOUT–) / (–2*VCC)] ; VOUT+ = 2*VCC + VDROP+ VOUT– = –2*VCC + VDROP– VDROP– = (I–)*(ROUT–) VDROP+ = (I+)*(ROUT+) Power Loss = IOUT*(VDROP) save board space, lower values will reduce the output drive capability. The output voltage ripple is also affected by the capacitors, specifically C3 and C4. Larger values will reduce the output ripple for a given load of current. The current drawn from either output is supplied by just the storage capacitor, C3 or C4, during one half cycle of the internal oscillator. Note that the output current from the postive charge pump is the load current plus the current taken by the negative charge pump. Thus the formula representation for the output ripple voltage is: VRIPPLE+ = {1 / (fOSC) * 1 / C3} * 0.5 * IOUT+ VRIPPLE– = {1 / (fOSC) * 1 / C3} * 0.5 * IOUT– To minimize the output ripple, the C3 and C4 storage capacitors can be increased to over 10µF whereas the pump capacitors can range from 1µF to 5µF. Multiple SP782/784 charge pumps can be connected in parallel. However, the output resistance on both pump outputs will be reduced. The effective output resistance is the output resistance of one pump divided by the number of charge pumps connected. It is important to keep the C1 and C2 capacitors separate for each charge pump. The storage capacitors, C3 and C4, can be shared. The efficiency changes as the external charge pump capacitors are varied. Larger capacitor values will strengthen the output and reduce output ripple usually found in all charge pumps. Although smaller capacitors will cost less and SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 10 SHUTDOWN MODE The internal oscillator of the SP782 and SP784 can be shutdown through the SD pin. In this state, the VDD and VSS outputs are inactive and the power supply current reduces to 10µA. LATCH ENABLE PIN The SP782 and SP784 includes a control pin (LAT) that latches the D0 and D1 control lines. Connecting this pin to a logic HIGH state will allow transparent operation of the D0 and D1 control lines. This input can be left floating since there is an internal pull-up resistor which will allow the latch to be transparent. APPLICATIONS INFORMATION The SP782 and SP784 can be used in various applications where ±10V is needed from a +5V source. Analog switches, op-amp power supplies, and LCD biasing are some applications where the charge pumps can be used. The charge pump can also be used for supplying voltage rails for RS-232 drivers needing ±12V. The ±10V output from the charge pump is more than adequate to provide the proper VOH and VOL levels at the driver output. Figure 8 shows how the SP784 can be used in conjunction with the SP524 multiprotocol transceiver IC. The programmability is ideal for RS-232 and RS-423 levels. The RS-232 driver output voltage swing ranges from ±5V to ±15V. In order to meet this requirement, the charge pump must generate ±10V to the transceiver IC. The RS-423 driver output voltage range is ±4.0V to ±6.0V. When the SP524 transceiver is programmed to RS-423 mode (V.10), the charge pump now provides ±5V, through D0 and D1, thus allowing the driver outputs to comply with VOC ≤ 6.0V as well as the VT requirement of ±4.0V minimum with a 450Ω load to ground. In older configurations, separate DC sources needed to be configured or regulated down from ±10V to ±5V in a given application. A typical charge pump providing VDD and VSS would require external clamping such as 5V Zener diodes. RS-423 (V.10) is usually found in RS-449, EIA-530, EIA-530A, and V.36 modes. When the control lines D0 and D1 are both at a logic HIGH, VDD = +5V and VSS = -5V. All other inputs to the control lines result in VDD = +10V and VSS = -10V. Control of the SP784 in an application with Sipex's SP524 can be found in Figure 8. SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 11 +5V 10µF + 13 14 10µF 1 12 5 10µF 3 C1+ C1– C2+ (b) C2+ (a) C2– D0 D1 EN SD GND 16 4 VCC 10µF VDD 11 SP784 9 8 6 15 VSS 2 10µF +5V 10µF + 28 VDD 2 VCC 14 19 29 VSS VCC VCC SP524 31 DP0 32 DP1 DECODER LOGIC LATCH_EN 30 LOOPBCK 23 24 T1IN 36 ENT1 25 T2IN 35 ENT2 44 R1OUT 40 ENR1 43 R2OUT 39 ENR2 T1 T1OUTA 22 T1OUTB 20 T2OUTA 18 T2OUTB 17 R1INA 3 R1INB 4 R2INA 5 R2INB 6 T2 R1 D0 0 0 1 1 D1 0 1 0 1 VDD +10V +10V +10V +5V VSS -10V -10V -10V -5V R2 LOOPBACK PATHS 26 T3IN 34 ENT3 27 T4IN 33 ENT4 42 R3OUT 38 ENR3 41 R4OUT 37 ENR4 GND 1 T3 T3OUTA 16 T3OUTB 15 T4OUTA 13 T4OUTB 11 R3INA 7 R3INB 8 R4INA 9 R4INB 10 GND 21 T4 R3 R4 GND 12 Figure 8. SP784 Application w/ SP524 Multi-Protocol Transceiver IC. SP782/SP784 DS/08 SP782/784 Programmable Charge Pump LOOPBACK PATHS © Copyright 2000 Sipex Corporation 12 +5V 10µF + 6 14 1µF 1 12 5 1µF 3 LATCH C1+ C1– C2+ C2+ C2– GND 16 4 13 15 1µF VCC SD VDD 11 SP782 VSS D0 9 D1 8 2 1µF +5V 10µF + 13 14 10µF 1 12 5 10µF 3 C1+ C1– C2+ (b) C2+ (a) C2– D0 D1 LATCH SD GND 16 4 VCC 10µF VDD 11 SP784 9 8 6 15 VSS 2 10µF Figure 9. SP782 and SP784 Block Diagrams SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 13 PACKAGE: PLASTIC SMALL OUTLINE (SOIC) (WIDE) E H D A Ø e B A1 L DIMENSIONS (Inches) Minimum/Maximum (mm) A A1 B D E e H L Ø 16–PIN 0.093/0.104 (2.352/2.649) 0.004/0.012 (0.102/0.300) 0.013/0.020 (0.330/0.508) 0.398/0.406 (10.11/10.31) 0.291/0.299 (7.402/7.600) 0.050 BSC (1.270 BSC) 0.394/0.419 (10.00/10.64) 0.016/0.050 (0.406/1.270) 0°/8° (0°/8°) SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 14 PACKAGE: 16-PIN PLASTIC DUAL–IN–LINE (NARROW) E1 E D1 = 0.005" min. (0.127 min.) D A1 = 0.015" min. (0.381min.) A A2 e = 0.100 BSC (2.540 BSC) B1 B ALTERNATE END PINS (BOTH ENDS) DIMENSIONS (Inches) Minimum/Maximum (mm) A A2 B B1 C D E E1 L Ø C Ø eA = 0.300 BSC (7.620 BSC) L 16–PIN –/0.210 (–/5.334) 0.115/0.195 (2.921/4.953) 0.014/0.022 (0.356/0.559) 0.045/0.070 (1.143/1.778) 0.008/0.014 (0.203/0.356) 0.780/0.800 (19.812/20.320) 0.300/0.325 (7.620/8.255) 0.240/0.280 (6.096/7.112) 0.115/0.150 (2.921/3.810) 0°/ 15° (0°/15°) SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 15 ORDERING INFORMATION Model Temperature Range Package Types SP782CP .......................................................................... 0°C to +70°C ..................................................................................... 16-pin Plastic DIP SP784CP .......................................................................... 0°C to +70°C ..................................................................................... 16-pin Plastic DIP SP782CT ........................................................................... 0°C to +70°C .............................................................................................. 16-pin SOIC SP784CT ........................................................................... 0°C to +70°C .............................................................................................. 16-pin SOIC Please consult the factory for pricing and availability on a Tape-On-Reel option. Corporation SIGNAL PROCESSING EXCELLENCE Sipex Corporation Headquarters and Sales Office 22 Linnell Circle Billerica, MA 01821 TEL: (978) 667-8700 FAX: (978) 670-9001 e-mail: sales@sipex.com Sales Office 233 South Hillview Drive Milpitas, CA 95035 TEL: (408) 934-7500 FAX: (408) 935-7600 Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the application or use of any product or circuit described hereing; neither does it convey any license under its patent rights nor the rights of others. SP782/SP784 DS/08 SP782/784 Programmable Charge Pump © Copyright 2000 Sipex Corporation 16
SP784CP
### 物料型号 - 型号:SP782/SP784 - 描述:可编程电荷泵,用于从单电源产生正负电压。

### 器件简介 - 功能:SP782和SP784是单片可编程电压转换器,可以从单一电源产生正负电压。它们可以通过控制两个引脚(D0和D1)来编程输出±10V或±5V的电压。两种产品都需要四个充电泵电容器来支持结果输出电压。 - 技术:使用低功耗双极CMOS工艺技术制造。 - 应用:手持仪器、笔记本电脑、数据采集系统等。

### 引脚分配 - D0和D1:控制引脚,用于编程输出电压。 - SD: shutdown引脚,用于关闭内部振荡器以节省功耗。 - LAT:锁存使能引脚,用于锁存D0和D1控制线。

### 参数特性 - 供电电流:在+5V供电下,关闭状态下的供电电流为10μA至25μA。 - 输出电压:VDD(2xVCC输出)为+9.5V至+10.0V,VSS(2xVCC输出)为-9.5V至-10.0V。 - 效率:在无负载时,SP782和SP784的效率可达99.9%。在驱动1kΩ负载时,效率至少为90%。

### 功能详解 - 四相电压移位技术:SP782/784的电荷泵设计基于Sipex的原始专利电荷泵设计,使用四相电压移位技术实现对称的10V电源供应。 - 振荡器频率:设计用于低功耗操作,振荡器在SD引脚为逻辑“1”时从高频率模式(400kHz)切换到低频率模式(20kHz)。

### 应用信息 - 应用领域:模拟开关、运放电源、LCD偏置等需要从+5V源获得±10V的应用。 - RS-232/RS-423驱动:电荷泵可用于为需要±12V的RS-232驱动器提供电压轨。SP784与SP524多协议收发器IC配合使用,可实现RS-232和RS-423电平。

### 封装信息 - 16-pin Plastic DIP:16引脚塑料双列直插式封装。 - 16-pin Plastic SOIC:16引脚塑料小外形集成电路封装。
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