XR46000ESETR

XR46000 N-Channel Power MOSFET Description The XR46000 is a silicon N-channel enhanced power MOSFET. With low conduction loss, good switching performance and high avalanche energy, it is suitable for various power supply system, especially for AC step driving application for LED lighting. The package type is SOT-223, which comply with the RoHS standard. APPLICATIONS ■■ LED lighting applications Downlight High bay Specialty Architectural Key Parameters VDSS 600V ID 1.5A PD (TC = 25°C) 20W RDS,ON,typ 7.0Ω FEATURES ■■ Fast switching ■■ ESD improved capability ■■ Low gate charge (Typ. 7.5nC) ■■ Low reverse transfer capacitance (Typ. 5.0pF) Equivalent Circuit Pin Configuration Drain Drain 1 Gate Gate 2 3 Drain Source SOT-223, Top View Source Figure 1. Equivalent Cirucit REV1B 1/6 XR46000 Absolute Maximum Ratings Operating Conditions Stresses beyond the limits listed below may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. TJ operating junction temperature.............................. 150°C TA operating ambient temperature................. -40°C to 85°C TC = 25°C unless otherwise noted. VDSS drain-to-source voltage....................................... 600V ID continuous drain current (TC = 25°C)........................ 1.5A ID continuous drain current (TC = 100°C).................... 0.85A IDM pulsed drain current................................................... 6A VGS gate-to-source voltage.......................................... ±30V PD power dissipation (TC = 25°C)................................. 20W PD derating factor above 25°C.............................. 0.16W/°C TSTORAGE storage temperature range.......... -65°C to 150°C EAS single pulse avalanche energy..............................80mJ NOTE: Unless otherwise noted, all tests are pulsed tests at the specified temperature, therefore: TJ = TC = TA. REV1B 2/6 XR46000 Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Min 600 Typ Max Units OFF Characteristic BVDSS Drain to source breakdown voltage VGS = 0V, ID = 250µA ∆BVDSS/∆TJ Breakdown voltage temperature coefficient ID = 250µA, reference 25°C IDSS Drain to source leakage current IGSS(F) IGSS(R) V 0.71 V/°C VDS = 600V, VGS = 0V, TA = 25°C 25 VDS = 600V, VGS = 0V, TA = 125°C 250 Gate to source forward leakage VGS = 30V 12 Gate to source reverse leakage VGS = -28V -12 µA µA ON Characteristic (pulse width tp ≤ 380µs, б ≤ 2%) RDS(ON) Drain to source on-resistance VGS = 10V, ID = 0.75A VGS(TH) Gate threshold voltage VDS = VGS, ID = 250µA 7.0 2.0 8.0 Ω 4.0 V Dynamic Characteristic gfs Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance VDS = 15V, ID = 0.75A 1.0 s 170 VGS = 0V, VDS = 25V, f = 1MHz 27 pF 5 Resistive Switching Characteristic td(ON) Turn-on delay time 8 tr Rise time td(OFF) Turn-off delay time tf Fall time 55 Qg Total gate charge 7.5 Qgs Gate to source charge Qgd Gate to drain “Miller” charge ID = 1.5A, VDD = 300V, VGS = 10V, RG = 4.7Ω ID = 1.5A, VDD = 480V, VGS = 10V 30 ns 22 nC 1.7 4.0 Source-Drain Diode Characteristics (pulse width tp ≤ 380us, б ≤ 2%) IS Continuous source current (body diode) 1.5 ISM Maximun source current (body diode) 6.0 VSD Diode forward voltage Trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current A IS = 1.5A, VGS =0V ID = 1.5A, TJ = 25°C, dIF/dt = 100A/µs, VGS = 0V REV1B 1.5 V 530 ns 1100 nC 4.4 A 3/6 XR46000 Typical Performance Characteristics ID, Drain Current (A) 10 10μs 1 10ms 100ms 0.1 Operation in this area may be limited by RDS(ON) 0.01 TJ = 150°C TC = 25°C Single Pulse 0.001 DC 10 100 VDS, Drain-to-Source Voltage (V) 1 1000 Figure 2. Safe Operating Area 12 RDS(ON), Drain-to-Source ON Resistance (Ω) 11 ID = 1.5A 10 Pulse duration = 10µs Duty factor = 0.5% Max TC = 25°C ID = 0.75A 9 ID = 0.375A 8 7 6 6 4 8 10 VGS, Gate-to-Source Voltage (V) 12 14 Figure 3. Typical Drain-to-Source ON Resistance vs. Gate Voltage and Drain Current RDS(ON), Drain-to-Source ON Resistance, Normalized 2.5 2 VGS = 10V ID = 250µA 1.5 1 0.5 0 -100 -50 0 100 50 TJ, Junction Temperature (°C) 150 200 Figure 4. Typical Drain-to-Source ON Resistance vs. Junction Temperature REV1B 4/6 XR46000 Package Description REV1B 5/6 XR46000 Ordering Information(1) Part Number XR46000ESETR Operating Temperature Range Package Packaging Method Lead Free(2) -40°C ≤ TJ ≤ 150°C SOT-223 Tape and reel Yes NOTES: 1. Refer to www.maxlinear.com/XR46000 for most up-to-date Ordering Information. 2. Visit www.maxlinear.com for additional information on Environmental Rating. Revision History Revision Date Description 1A Aug 2016 Initial release 1B Nov 2019 Updated to MaxLinear logo. Updated Ordering Information. 5966 La Place Court Suite 100 Carlsbad, CA 92008 Tel.: +1 (760) 692-0711 Fax: +1 (760) 444-8598 www.maxlinear.com The content of this document is furnished for informational use only, is subject to change without notice, and should not be construed as a commitment by MaxLinear, Inc. MaxLinear, Inc. assumes no responsibility or liability for any errors or inaccuracies that may appear in the informational content contained in this guide. Complying with all applicable copyright laws is the responsibility of the user. Without limiting the rights under copyright, no part of this document may be reproduced into, stored in, or introduced into a retrieval system, or transmitted in any form or by any means (electronic, mechanical, photocopying, recording, or otherwise), or for any purpose, without the express written permission of MaxLinear, Inc. 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