BAV16BPT

E L E C T R O N I C BAV16BPT Fast Switching Diode Array – 150mAmp 75Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Lead free device -ESD sensitive product handling required SOD-123 .028(0.70) .018(0.45) .071(1.80) .055(1.40) .112(2.85) .100(2.55) .008(0.2) .053(1.35) .035(0.90) □ Mechanical data -Case：Molded plastic -Polarity：Color band denotes cathode end .020(0.50) .004(0.12) .153(3.90) .140(3.55) □ Maximum ratings and Electrical characteristics TYPE Maximum Non-Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum Repetitive Peak Reverse and DC Blocking Voltage Maximum Average Forward Rectified Current Non-Repetitive Peak Forward urge Current @ t = 1.0uSec @t = 1.0Sec @ IF = 1.0mA @ IF = 10mA @ IF = 50mA @ IF = 150mA @TJ = 25ºC @TJ = 150ºC SYMBOL VRM VRMS VRRM ,VDC IO IFSM BAV16BPT 100 53 75 150 2.0 1.0 0.715 0.855 1.00 1.25 1.0 50 2.0 4.0 625 -65 - 150 UNIT V V V mA A Maximum Instantaneous Forward Voltage VF V Maximum Average Reverse Current IR CJ TRR RθJA TJ , TSTG μA pF nSec ºC/W ºC August 2007 / Rev.5 Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Thermal Resistance Junction to Ambient (Note 3) Maximum Storage and Operating Temperature Range Note: .1.Measured at 1.0 MHz and applied reverse voltage of 0 volts 2.Measured at applied forward current of 10mA and reverse current of 10mA 3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch http:// www.sirectsemi.com 1 BAV16BPT 1 100u Ta = 100℃ 10u FORWARD CURRENT , (A) REVERSE CURRENT , (A) 100m Ta = 85℃ 50℃ 10m 25℃ 0℃ -30℃ 1u 75℃ 50℃ 100n 25℃ 0℃ -25℃ 10n 1n 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1n 0 10 20 30 40 50 60 70 80 FORWARD VOLTAGE , (V) REVERSE VOLTAGE , (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics AVERAGE FORWARD CURRENT , (%) 16 10 125 JUNCTION CAPACITANCE , (pF) 100 75 2 50 25 f = 1MHz 0 0 2 4 6 8 10 12 14 0 0 25 50 75 100 125 150 REVERSE VOLTAGE , (V) AMBIENT TEMPERATURE ,℃ Figure 3. Typical Junction Capacitance Figure 4. Forward Current Derating Curve REVERSE RECOVERY TIME , (nS) 8 6 4 2 V R = 6V 0 0 2 4 6 8 10 FORWARD CURRENT , (mA) Figure 5. Reverse Recovery Time Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com …Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com http:// www.sirectsemi.com 2