BTA26

BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t V alue for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns TO-220AB F = 60 Hz F = 50 Hz Tc = 100°C t = 16.7 ms t = 20 ms Value 25 260 250 340 Tj = 125° C 50 Unit A A A²s A/µs tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p owe r diss ipation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 50 70 80 500 13 35 1 .3 0.2 75 80 100 10 00 22 V/µs A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Ω Tj = 125°C Test Cond itions RL = 33 Ω Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 80 70 160 500 10 V/µ s V/µ s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =13.3A/ms Tj = 125°C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IG T is guaranted at 5% of IG T max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 35 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 16 5 3 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 0.8 60 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTBV/BTA26 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA26 Marking BTB/BTA26 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F i g. 1 M a x imum power dis s ipation ve rs us R M S : on-s ta te c urrent ( fu ll c yc le ) . 30 25 20 15 10 5 0 0 5 IT (R MS ) (A ) 10 15 20 25 P (W) 30 25 20 15 10 5 0 0 25 50 T c (°C ) 75 100 125 B TA 24 F i g. 21 : R M S on-s tate c urrent ve rs us c a s e te mperatu re ( full c yc le). IT (R MS ) (A ) B T B /T 25 B TA 25/26 F i g. 3 R ela tive va riation of ther ma l impedanc e : ve rs us puls e duratio n. F i g. 4 : va lues ). O n-s ta te c harac te ris tic s ( ma ximum 1E +0 K =[Zth/R th] Zth(j-c) 300 100 IT M (A ) T j max 1E -1 Zth(j-a) B TA/B T B 24/T 25 1E -2 10 Zth(j-a) B TA26 T j=25°C tp (s ) 1E -3 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T j max. V to = 0.85 V R d = 16 Ω m 4.0 4.5 F i g. 5 S urge peak on-s tate c urrent ve rs u s : numbe r of c ycle s . IT S M (A ) 300 250 200 150 100 50 0 t=20ms Non repetitive T j initial=25°C One cycle R epetitive T c=75°C Number of y c les c 1 10 100 1000 BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F i g. 6 N on-repe titive s urge peak on -s ta te : c urrent for a s inus oida l puls e with width tp < 10ms , a nd c orres pon ding va lue of I ²t. IT S M (A ),I² (A ² ) t s 3000 T j initial=25°C dI/dt limitation: 50A /µs F i g. 7 R ela tive va riation of ga te trigge r c urrent, : h oldin g c urrent a nd la tc hing c urrent ve rs u s junc tion te mperatu re ( typic al va lues ). IG T ,IH,IL [T j] / IG,IH,IL [T j=25°C ] T 2.5 2.0 IG T 1000 1.5 IT S M 1.0 0.5 IH & IL tp (ms ) 100 0.01 0.10 1.00 I²t T j(°C ) 10.00 0.0 -40 -20 0 20 40 60 80 100 120 14 0 F i g. 8 R ela tive va ria tio n of c ritic al ra te of : dec reas e of ma in c urren t ve rs us ( dV /dt)c ( ty pic a l va lues ). (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2 .4 2 .2 2 .0 1.8 1.6 B W/C W/T 2535 1.4 B 1.2 1.0 0.8 0.6 (dV /dt)c (V /µs ) 0.4 0.1 1.0 10.0 F i g. 9 R ela tive va r iation of c r itic al rate of : de c re a s e of ma in c urrent ve rs us junc tion te mperatu re. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 100. 0 T j (°C ) 0 25 50 75 100 12 5 0