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BTB08

BTB08

  • 厂商:

    SIRECT

  • 封装:

  • 描述:

    BTB08 - Discrete Triacs(Non-Isolated/Isolated) - Sirectifier Global Corp.

  • 数据手册
  • 价格&库存
BTB08 数据手册
BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t V alue for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns Peak gate current Average gate p owe r diss ipation Storage junction temperature range Operating junction temperature r ange TO-220AB F = 60 Hz F = 50 Hz Tc = 110°C t = 16.7 ms t = 20 ms Value 8 84 80 36 Tj = 125° C Tj = 125°C Tj = 125° C 50 4 1 - 40 to + 150 - 40 to + 125 Unit A A A²s A/µs A W °C tp = 10 ms F = 120 Hz tp = 20 µs ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s SNUBBERL ESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 30 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 400 4.5 35 1 .3 0.2 50 70 80 10 00 7 V/µs A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Ω Tj = 125°C Test Cond itions RL = 30 Ω Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/µ s V/µ s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =3.5 A/ms Tj = 125°C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IG T is guaranted at 5% of IG T max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 11 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 50 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.6 60 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTB/BTA08 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA08 Marking BTB/BTA08 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F i g. 1 : M a x imum power dis s ipation ve rs us R M S on-s ta te c urrent ( fu ll c yc le ) . P (W) 10 9 8 7 6 5 4 3 2 1 0 10 9 8 7 6 5 4 3 2 1 0 F i g. 2 - 1 : R M S on-s tate c urrent ve rs us c a s e te mperatu re ( full c yc le). IT (R MS ) (A ) BTB B TA IT (R MS )(A ) T c (° C ) 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 F i g. 2 -2 : R M S on -s ta te c urrent ve rs us a mbient te mpe rature ( printed c irc uit board F R 4, c opper th ic knes s : 3 5µm ), full c ycle . IT (R MS ) (A ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 T a mb(° C ) DP A K (S =0.5c m 2 ) D 2PA K (S =1c m 2 ) F i g. 3 : R ela tive va riation of ther ma l impedanc e ve rs us puls e duratio n. K =[Zth/R th] 1E +0 Zth(j-c) 1E -1 Zth(j-a) 1E -2 50 75 100 125 1E -3 1E -3 tp(s ) 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 F i g. 4 : va lues ). IT M (A ) 100 O n-s ta te c ha ra c te r is tics (ma ximum F i g. 5 : S urge peak on-s tate c urrent ve rs u s numbe r of c ycle s . IT S M (A ) T j max. V to = 0.85 V R d = 50 m T j=T j max 10 T j=25° C V T M(V ) 1 0.5 1 .0 1.5 2 .0 2.5 3 .0 3.5 4 .0 4.5 5 .0 90 80 70 60 50 40 30 20 10 0 t=20ms One cycle Non repetitive T j initial=25° C R epetitive T c=100° C Number of c y c l es 1 10 100 1000 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F i g. : 6 N on-repe titive s urge peak on -s ta te c urrent for a s inus oida l puls e with width tp < 10ms , a nd c orres pon ding va lue of I ²t. IT S M (A ),I² (A ² ) t s 1000 T j initial=25°C F i g. 7 R ela tive va riation of ga te trigge r c urrent, : h oldin g c urren t a nd la tc hing c urrent ve rs u s junc tion te mperatu re ( typic al va lues ). IG T ,IH,IL [T j] / IG,IH,IL [T j=25°C ] T 2.5 2.0 dI/dt limitation: 50A /µs IG T IT S M 1.5 1.0 IH & IL 100 I²t 0.5 tp (ms ) 10 0.01 0.10 1.00 10.00 T j(°C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F i g. -8 : R e la tive va r ia tion o f c ritic a l ra te of 2 de c re a s e of ma in c urrent ve rs us ( dV /dt)c ( ty pic al va lues ). S tandard Ty pes (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 (dV /dt)c (V /µs ) B C F i g. : 9 R ela tive va ria tio n of c ritic al ra te of dec reas e of ma in c u rre nt ve rs us junc tio n te mpe rature . (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 T j(°C ) 1.0 10.0 100.0 0 0 25 50 75 100 125 F i g. 0 : D PA K a nd D 2PA K T h er ma l re s is tanc e 1 junc tion to a mbient ve rs us c opper s urfac e unde r tab ( printed c irc uit board F R 4, c o pper thic k nes s : 35 ∝m) . R th(j-a) (°C /W) 100 90 80 70 60 50 40 30 20 10 0 DPAK D²PA K S (c m² ) 0 4 8 12 16 20 24 28 32 36 40 BTB/BTA08 Discrete Triacs(Non-Isolated/Isolated) F i g. 6 : N on-repe titive s urge peak on -s ta te c urrent for a s inus oida l puls e with width tp < 10ms , a nd c orres pon ding va lue of I ²t. IT S M (A ), I² t (A ² s ) 1000 T j initial=25° C F i g. 7 : R ela tive va riation of ga te trigge r c urrent, h oldin g c urren t a nd la tc hing c urrent ve rs u s junc tion te mperatu re ( typic al va lues ). IG T ,IH,IL [T j] / IG T ,IH,IL [T j=25° C ] 2.5 2.0 dI/dt limitation: 50A /µ s IG T IT S M 1.5 1.0 IH & IL 100 I² t 0.5 tp (ms ) 10 0.01 0.10 1.00 10.00 T j(° C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F i g. 8 - 1 : R ela tive va riation of c r itic al ra te of dec reas e of ma in c urren t ve rs us ( dV /dt)c ( ty pic a l va lues ). S nubberle s s & L ogic L e ve l Ty pes (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.2 2.0 TW 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 (dV /dt)c (V /µ ) s 0.2 0.0 0.1 1 .0 10.0 F i g. 8 -2 : R e la tive va r ia tion o f c ritic a l ra te of de c re a s e of ma in c urrent ve rs us ( dV /dt)c ( ty pic al va lues ). S tandard Ty pes (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 1.6 1.4 B C T 835/C W/B W 1.2 1.0 0.8 0.6 100.0 (dV /dt)c (V /µ ) s T 810/S W 0.4 0.1 1.0 10.0 100.0 F i g. 9 : R ela tive va ria tio n of c ritic al ra te of dec reas e of ma in c u rre nt ve rs us junc tio n te mpe rature . F i g. 1 0 : D PA K a nd D 2PA K T h er ma l re s is tanc e junc tion to a mbient ve rs us c opper s urfac e unde r tab ( printed c irc uit board F R 4, c o pper thic k nes s : 35 ∝m) . R th(j-a) (° C /W) 100 90 80 70 60 50 40 30 20 10 0 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 0 25 T j(° C ) DPAK D² P K A S (c m² ) 50 75 100 125 0 4 8 12 16 20 24 28 32 36 40
BTB08 价格&库存

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