BTB10

BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 T2 G T2 T1 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t V alue for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns TO-220AB F = 60 Hz F = 50 Hz Tc = 105°C t = 16.7 ms t = 20 ms Value 10 105 100 55 Tj = 125° C 50 Unit A A A²s A/µs tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p owe r diss ipation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 500 5.5 35 1 .3 0.2 50 70 80 10 00 9.0 V/µs A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Ω Tj = 125°C Test Cond itions RL = 33 Ω Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/µ s V/µ s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =4.4 A/ms Tj = 125°C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IG T is guaranted at 5% of IG T max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 14 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 40 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.5 60 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTBV/BTA10 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA10 Marking BTB/BTA10 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F i g. 1 M a x imum power dis s ipation ve rs us R M S : on-s ta te c urrent ( fu ll c yc le ) . P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 F i g. 2 R M S o n-s ta te c u rre nt ve rs us c as e : te mperatu re ( full c yc le). IT (R MS ) (A ) 12 11 10 9 8 7 6 5 4 3 2 1 0 B TB B TA IT (R MS ) (A ) 0 1 2 3 4 5 6 7 8 9 10 T c (°C ) 0 25 50 75 100 125 F i g. 3 R e la tive va r iation of ther ma l impeda nc e : ve rs u s puls e duration. K =[Zth/R th] Zth(j-c ) F i g. 4 : va lues ). IT M (A ) 100 O n -s ta te c ha ra c te ris tics ( ma x imum 1E +0 T j max. V to = 0.85 V R d = 40 W m T j max 1E -1 Zth(j-a) 10 T j=25°C tp (s ) 1E -2 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F i g. 5 S urge pe ak o n-s ta te c urre nt ve rs us : numbe r of c ycle s . F i g. 6 N on-repetitive s urge pea k on-s tate : c urrent fo r a s inus oidal puls e with width tp < 10ms , a nd c orres ponding va lue of I²t. IT S M (A ),I² (A ² ) t s 1000 T j initial=25°C IT S M (A ) 110 100 90 80 70 60 50 40 30 20 10 0 t=20ms Non repetitive T j initial=25°C One cycle dI/dt limitation: 50A /µs IT S M 100 R epetitive T c=95°C I²t Number of y c les c 1 10 100 1000 10 0.01 0.10 tp (ms ) 1.00 10.00 BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F i g. 7 R ela tive va riation o f gate trigger c u rren t, : holding c urrent a n d la tc hing c urrent ve rs us junc tion te mpe rature ( ty pic al va lue s ). IG T ,IH,IL [T j] / IG,IH,IL [T j=25°C ] T F i g. 8 R ela tive va r iation of c r itic a l ra te of dec reas e : o f ma in c urrent ve rs u s ( dV /dt) c ( typic al va lue s ). 2.5 2.0 2.0 1.8 1.6 1.4 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c C B IG T 1.5 1.0 0.5 T j(°C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH & IL 1.2 1.0 0.8 0.6 0.4 0.1 1.0 (dV /dt)c (V /µs ) 10.0 B W/C W 100.0 F i g. 9 R ela tive va ria tio n of c ritic al ra te of : dec reas e of ma in c u rre nt ve rs us junc tio n te mpe rature . (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 0 25 50 T j (°C ) 75 100 125