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SG15N12P

SG15N12P

  • 厂商:

    SIRECT

  • 封装:

  • 描述:

    SG15N12P - Discrete IGBTs - Sirectifier Global Corp.

  • 数据手册
  • 价格&库存
SG15N12P 数据手册
SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB E C G G=Gate, C=Collector, E=Emitter Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 SG15N12P Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o SG15N12DP Test Conditions Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM=40 @ 0.8 VCES 150 -55...+150 150 -55...+150 Unit V V TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms o A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 C 300 0.45/4 0.55/5 4 o C Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=VCES; VGE=0V; TJ=25 C TJ=125 C o o Characteristic Values min. 600 2.5 5.0 100 3.5 ±100 3.2 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG15N12P, SG15N12DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions 0.5 Inductive load, TJ=25 C IC=IC90; VGE=15V; VCE=960V; RG=Roff=10 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=125 C IC=IC90; VGE=15V; VCE=960V; RG=Roff=10 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 15 max. S 12 2% 300us, duty cycle 1720 VCE=25V; VGE=0V; f=1MHz 95 35 69 IC=IC90; VGE=15V; VCE=0.5VCES 13 26 25 15 180 160 1.75 25 18 0.60 300 360 3.5 0.83 280 320 3.0 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. 2.6 2.1 max. 2.8 33 20 15 200 40 1.6 V A A ns K/W Unit VF IF IRM trr RthJC IF=20A; VGE=0V IF=20A; VGE=0V; TJ=125oC TC=25oC TC=90oC IF=20V; -diF/dt=400A/us; VR=600V VGE=0V; TJ=125oC IF=1A; -diF/dt=100A/us; VR=30V; VGE=0V
SG15N12P 价格&库存

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