SG20N12T

SG20N12T, SG20N12DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG20N12T SG20N12DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 1200 1200 ±20 ±30 40 20 80 ICM=40 @ 0.8 VCES 150 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=47 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Maximum Tab temperature for soldering SMD devices for 10s Md Weight Mounting torque (M3) C 300 260 1.13/10 6 o C C o Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) IC=1mA; VGE=0V IC=250uA; VCE=VGE VCE=VCES; VGE=0V; TJ=25 C TJ=125 C 2.0 o o Test Conditions Characteristic Values min. 1200 2.5 5.0 250 1 ±100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG20N12T, SG20N12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ=25 C IC=IC90; VGE=15V; L=100uH; VCE=0.8VCES'; RG=Roff=47 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=125 C IC=IC90; VGE=15V; L=100uH; VCE=0.8VCES'; RG=Roff=47 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 16 max. S 12 2% 300us, duty cycle 1750 VCE=25V; VGE=0V; f=1MHz 90 31 63 IC=IC90; VGE=15V; VCE=0.5VCES 13 26 28 20 400 380 6.5 30 27 0.90 700 550 9.5 0.83 800 700 10.5 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol Test Conditions o (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 1.87 2.15 7 40 60 1.6 A ns K/W V Unit VF IF=12A; TVJ=150 C TVJ=25oC IRM trr RthJC VR=540V; IF=20A; -diF/dt=100A/us L 0.05uH; TVJ=100oC IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC