SG23N06DT

SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG23N06T SG23N06DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 600 600 ±20 ±30 48 23 96 ICM=48 @ 0.8 VCES 150 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=22 (RBSOA) Clamped inductive load; L=100uH PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque C 300 o C 1.13/10 6 Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=150 C 2.1 o o Characteristic Values min. 600 2.5 5.0 200 1 ±100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG23N06T, SG23N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ=25 C IC=IC90; VGE=15V; L=100uH VCE=0.8VCES; RG=Roff=10 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=125 C IC=IC90; VGE=15V; L=100uH VCE=0.8VCES; RG=Roff=10 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 17 max. S 9 2% 300us, duty cycle 1500 VCE=25V; VGE=0V; f=1MHz 120 40 55 IC=IC90; VGE=15V; VCE=0.5VCES 13 17 15 25 75 60 0.24 15 25 0.15 130 110 0.6 0.83 140 110 0.36 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol Test Conditions o (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 1.6 2%; TJ=25 C 6 100 25 0.9 o Unit VF IF=IC90; VGE=0V;TJ=150 C Pulse test, t 300us, duty cycle 2.5 V A ns ns K/W IRM trr RthJC IF=IC90; VGE=0V; -diF/dt=100A/us VR=100V; TJ=100oC IF=1A; -di/dt=100A/us; VR=30V; TJ=25oC