SG25S12T

SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG25S12T SG25S12DT Symbol VCES VCGR VGES VGEM IC25 IC90 SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC Maximum Ratings 1200 1200 ±20 ±30 46 25 ICM=48 @ 0.8 VCES 313 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=25 (RBSOA) Clamped inductive load, L=100uH PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque (M3) C 260 o C 1.13/10 6 Nm/Ib.in. g Symbol BVCES VGE(th) ICES IGES V CE(sat) Test Conditions IC=1500uA; VGE=0V IC=1000uA; VCE=VGE VCE=1200V; VGE=0V; TJ=25 C TJ=150 C o o (TJ=25oC, unless otherwise specified) Characteristic Values Unit min. 1200 3.0 4.0 5.0 350 1.4 ±100 2.35 typ. max. V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG25S12T, SG25S12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=25A; VCE=20V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ=25 C IC=25A; VGE=15V/0V; L=180uH VCC=800V; RG=Roff=22 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=150 C IC=25A; VGE=15V/0V; L=180uH VCC=800V; RG=Roff=22 Remarks:Switching times may increase for VCE(Clamp) increased RG IGBT 0.8VCES' higher TJ or o o Unit typ. 20 max. S 2600 190 130 300 60 52 950 39 2.0 60 43 4.6 990 50 3.8 0.4 40 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF 300us, duty cycle 2% 2150 VCE=25V; VGE=0V; f=1MHz 160 110 225 IC=25A; VGE=15V; VCC=960V 45 40 730 30 1.5 50 36 3.8 820 42 2.9 Reverse Diode (FRED) Symbol Test Conditions o (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 2.2 2.55 16 40 18 60 0.9 A ns K/W V Unit VF IF=30A; TVJ=150 C TVJ=25 C o IRM trr RthJC VR=540V; IF=30A; -diF/dt=240A/us L 0.05uH; TVJ=100oC IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC