SG50N06S

SG50N06S, SG50N06DS Discrete IGBTs E C Dimensions SOT-227(ISOTOP) Dim. A B C D Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 G=Gate, C=Collector, E=Emitter E G E F G H J K L M N O P Q R S T U V W SG50N06S Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA SG50N06DS Test Conditions Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.8 VCES 250 -55...+150 150 -55...+150 Unit V V TJ=25oC to 150oC TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Terminal connection torque(M4) C 1.5/13 1.5/13 30 300 Nm/Ib.in. g o C (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=125 C o Characteristic Values min. 600 2.5 5 200 1 ±100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.05 Inductive load, TJ=25 C IC=IC90; VGE=15V; L=100uH VCE=0.8VCES'; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=125 C IC=IC90; VGE=15V; L=100uH VCE=0.8VCES'; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 35 max. S 25 2% 300us, duty cycle 4000 VCE=25V; VGE=0V; f=1MHz 340 100 110 IC=IC90; VGE=15V; VCE=0.5VCES 30 40 50 30 200 150 3 50 25 3 280 250 4.2 0.50 180 50 100 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol o (TJ=25oC, unless otherwise specified) Test Conditions Characteristic Values min. typ. max. 1.75 2.40 650 2.5 8.0 35 0.85 o Unit VF IR IRM trr RthJC IF=60A; TVJ=150 C Pulse test, t 300us, duty cycle d TVJ=25oC; VR=VRRM TVJ=150oC 2%; TVJ=25 C o V uA mA A ns K/W IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V IF=1A; -di/dt=50A/us; VR=30V; TJ=25 C