STPR502D

STPR502D Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode STPR502D VRRM V 200 VRMS V 140 VDC V 200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage At 5.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25 C @TJ=125oC o Maximum Ratings @TC=100 oC TP=8.3ms 5.0 100 0.90 5 500 78 25 4.0 -55 to +150 Unit A A V uA pF ns o C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR502D Ultra Fast Recovery Diodes 5 PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACT ERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 100 TJ = 125 C 10 TJ = 25 C 10 TJ = 75 C 1.0 1.0 0.1 TJ = 25 C PULSE W IDTH 300us 2% Duty cycle .01 0 20 40 60 80 100 120 140 0.1 0 0.2 0.4 0.6 0..8 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 180 160 140 CAPACIT ANCE , (pF) 120 100 80 60 40 20 0 0.1 1 4 10 100 TJ = 25 C, f= 1MHz REVERSE VO LTAGE , VO LTS