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STPR815DF

STPR815DF

  • 厂商:

    SIRECT

  • 封装:

  • 描述:

    STPR815DF - Ultra Fast Recovery Diodes - Sirectifier Global Corp.

  • 数据手册
  • 价格&库存
STPR815DF 数据手册
STPR805DF thru STPR820DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 STPR805DF STPR810DF STPR815DF STPR820DF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current @TC=100 oC Maximum Ratings 8.0 125 0.95 @TJ=25 C @TJ=100oC o Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) 5 500 110 35 2.5 -55 to +150 C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR805DF thru STPR820DF Ultra Fast Recovery Diodes 10 WITH HEAT SINK TC PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8 6 4 FREE AMBIENT TA 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 0 25 50 75 100 125 150 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 100 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 TJ = 125 C INSTANTANEOUS REVERSE CURRENT ,(uA) INSTANTANEOUS FORW ARD CURRENT ,(A) 10 TJ = 125 C 50-200V 300-400V 500-600V 10 TJ = 100 C 1.0 TJ = 75 C 1.0 TJ = 25 C 0.1 TJ = 25 C 0.01 0 20 40 60 80 100 120 140 0.1 0 0.2 0.4 0.6 0.8 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PULSE WIDTH 300us 2% Duty cycle 1.2 1.4 1.6 1.8 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 50-400V 100 500-600V TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
STPR815DF 价格&库存

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