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STPR820D

STPR820D

  • 厂商:

    SIRECT

  • 封装:

  • 描述:

    STPR820D - Ultra Fast Recovery Diodes - Sirectifier Global Corp.

  • 数据手册
  • 价格&库存
STPR820D 数据手册
STPR810D thru STPR820D Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode STPR810D STPR820D VRRM V 100 200 VRMS V 70 140 VDC V 100 200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage Pulse Width=300us Duty Cycle Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance @TC=120oC TP=10ms TP=8.3ms Maximum Ratings 8.0 80 90 0.99 1.20 1.25 50 600 80 30 3.0 -55 to +150 Unit A A VF IF=8A @TJ=125oC IF=16A @TJ=125oC IF=16A @TJ=25oC @TJ=25oC @TJ=100oC V IR CJ TRR ROJC uA pF ns o C/W o TJ, TSTG Operating and Storage Temperature Range NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR810D thru STPR820D Ultra Fast Recovery Diodes 10 PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 120 100 80 TP=8.3ms 8 6 4 60 40 20 0 1 2 5 10 20 50 100 TP=10ms 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 2 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 100 TJ = 150 C 10 10 TJ = 100 C TJ = 125 C TJ = 25 C 1.0 1.0 TJ = 25 C 0.1 0.01 0 20 60 100 140 0.1 0 0.2 0.4 0.6 0.8 RATED PEAK REVERSE VOLTAGE (VOLTS) PULSE W IDTH 300us 2% Duty cycle 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
STPR820D 价格&库存

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