BTB06

BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) T O-22 0AB Tc = 100 ° C 6 A ITSM I²t dI/dt IGM PG(AV) Tstg Tj Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t V alue for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns Peak gate current Average gate p owe r diss ipation Storage junction temperature range Operating junction temperature r ange F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 63 60 21 A A²s A/µs A W °C tp = 10 ms F = 120 Hz tp = 20 µs Tj = 125° C Tj = 125°C Tj = 125° C 50 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 30 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 400 3.5 35 1 .3 0.2 50 70 80 10 00 5.3 V/µs A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Ω Tj = 125°C Test Cond itions RL = 30 Ω Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/µ s V/µ s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =2.7 A/ms Tj = 125°C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IG T is guaranted at 5% of IG T max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 5.5 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 60 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.8 60 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTB/BTA06 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA06 Marking BTB/BTA06 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F i g. 1 M a x imum power dis s ipation ve rs us R M S : on-s ta te c urrent ( fu ll c yc le ) . P (W) 8 7 6 5 4 3 2 1 0 0 1 2 IT (R MS )(A ) F i g. : 2 R M S o n-s ta te c u rre nt ve rs us c as e te mperatu re ( full c yc le). IT (R MS ) (A ) 7 6 5 4 3 2 1 T c (°C ) B TA BTB 3 4 5 6 0 0 25 50 75 100 125 F i g. :3 R e la tive va r iation of ther ma l impeda nc e ve rs u s puls e duration. K =[Zth/R th] 1E +0 Zth(j-c) F i g. : 4O n -s ta te va lues ). IT M (A ) 100 T j max. V to = 0.85 V R d = 60 Ω m c ha ra c te ris tics ( ma x imum T j=T j max 1E -1 Zth(j-a) 10 1E -2 1E -3 tp(s ) 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M(V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F i g. : 5 S urge pe ak o n-s ta te c urre nt ve rs us numbe r of c ycle s . F i g. : 6 N on-repetitive s urge pea k on-s tate c urrent fo r a s inus oidal puls e with width tp < 10ms , a nd c orres ponding va lue of I²t. IT S M (A ),I² (A ² ) t s 1000 T j initial=25°C IT S M (A ) 70 60 50 40 30 20 10 0 1 R epetitive T c=105°C Non repetitive T j initial=25°C t=20ms One cycle dI/dt limitation: 50A /µs IT S M 100 I²t Number of y c les c tp (ms ) 10 100 1000 10 0.01 0.10 1.00 10.00 BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F i g. 7 R ela tive va riation o f gate trigger c u rrent, : holding c urrent a n d la tc hing c urrent ve rs us junc tion te mpe rature ( ty pic al va lue s ). IG T ,IH,IL [T j] / IG,IH,IL [T j=25°C ] T 2.5 2.0 IG T F i g. -8 : R e la tive va r ia tion o f c ritic a l ra te of 1 de c re a s e of ma in c urrent ve rs us ( dV /dt)c ( ty pic al va lues ). S nubbe rles s & L ogic L e ve l Ty pe s (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 S W 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.5 1.0 0.5 T j(°C ) IH & IL TW B W/C W (dV /dt)c (V /µs ) 0.0 -40 -20 0 20 40 60 80 100 120 140 1.0 10.0 100.0 F i g. - 2 : R ela tive va riation of c r itic al ra te of 8 dec reas e of ma in c urrent ve rs us ( dV /dt)c ( ty pic a l va lues ). S tandard Ty pes (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 F i g. : 9 R ela tive va r iation of c r itic al rate of de c re a s e of ma in c urrent ve rs us junc tion te mperatu re. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 (dV /dt)c (V /µs ) 1 10.0 100.0 T j(°C ) 1.0 0 0 25 50 75 100 125