MBR10100CT

MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100 MBR1070CT MBR1080CT MBR1090CT MBR10100CT Symbol I(AV) IFSM dv/dt Characteristics Maximum Average Forward Rectified Current @TC=100oC Maximum Ratings 10 120 10000 IF=5A IF=5A IF=10A IF=10A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.95 0.85 0.1 15 3.0 300 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 10 PEAK FORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 120 100 80 60 40 20 0 1 2 5 10 20 50 100 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 100 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) TJ = 100 C 10 10 1.0 TJ = 75 C 0.1 1.0 0.01 TJ = 25 C TJ = 25 C PULSE W IDTH 300us 2% Duty cycle 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS