MBR1030 thru MBR1045
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45
MBR1030 MBR1035 MBR1040 MBR1045
Symbol I(AV) IFSM dv/dt VF IR ROJC CJ TJ TSTG
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 10 150 10000 IF=20A @TJ=25oC IF=20A @TJ=125oC @TJ=25oC @TJ=125oC 0.84 0.57 0.1 15 2.5 400 -55 to +150 -55 to +175
Unit A A V/us V mA
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Typical Junction Capacitance (Note 2) Operating Temperature Range Storage Temperature Range
C/W pF
o o
C C
NOTES: 1. Thermal Resistance Junction To Case. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any
MBR1030 thru MBR1045
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
10
PEAK FORW ARD SURGE CURRENT, AMPERES
FIG.1 - FORW ARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT
150 125 100 75 50 25 0 1 2 5 10 20 50 100
8
6 4
RESISTIVE OR INDUCTIVE LOAD
2
8.3ms Single Half-Sine-W ave (JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORW ARD CHARACT ERISTICS
100
INSTANTANEOUS FORW ARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
10
TJ = 100 C
10
1.0
TJ = 75 C
0.1
1.0
0.01
TJ = 25 C
TJ = 25 C
0.001 0 20 40 60 80 100 120 140
0.1 0.1 0.2 0.3 0.4 0.5 0.6
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PULSE W IDTH 300us 2% Duty cycle
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACIT ANCE , (pF)
1000
TJ = 25 C, f= 1MHz
100 0.1 1 4 10 100
REVERSE VOLTAGE , VOLTS
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