MBR1070 thru MBR10100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100
MBR1070 MBR1080 MBR1090 MBR10100 Symbol I(AV) IFSM dv/dt VF
Characteristics Maximum Average Forward Rectified Current @TC=135oC
Maximum Ratings 10 150 10000 IF=10A @TJ=25oC IF=10A @TJ=125oC IF=20A @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.80 0.1 100 2.0 1100 -55 to +150 -55 to +175
Unit A A V/us V
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range
IR ROJC CJ TJ TSTG
mA
o
C/W pF
o o
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any
MBR1070 thru MBR10100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
10
PEAK F ORW ARD SURGE CURRENT , AMPERES
FIG.1 - FORW ARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT
150 125 100 75 50 25 0 1 2 5 10 20 50 100
8
6 4
2
RESISTIVE OR INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave (JEDEC METHOD)
0
20
40
60
80
100
120
140
160
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERIST ICS
100
FIG.4 - TYPICAL FORW ARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT ,(mA)
TJ = 125 C
10
INSTANTANEOUS FORW ARD CURRENT ,(A)
10
1.0
0.1
TJ = 75 C
1.0
0.01
TJ = 25 C
TJ = 25 C
0.001 0 20 40 60 80 100 120 140
0.1 0.1 0.2 0.3 0.4 0.5 0.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PULSE W IDTH 300us 2% Duty cycle
0.7
0.8
0.9
1.0
INSTANTANEOUS FORW ARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACIT ANCE , (pF)
1000
TJ = 25 C, f= 1MHz
100 0.1 1 4 10 100
REVERSE VO LTAGE , VO LTS
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