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MBR2550CT

MBR2550CT

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    MBR2550CT - Wide Temperature Range and High Tjm Schottky Barrier Rectifiers - Sirectifier Semiconduc...

  • 详情介绍
  • 数据手册
  • 价格&库存
MBR2550CT 数据手册
MBR2545CT thru MBR2560CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode MBR2545CT MBR2550CT MBR2560CT Symbol I(AV) IFSM dv/dt VRRM V 45 50 60 VRMS V 31.5 35 42 VDC V 45 50 60 Characteristics Maximum Average Forward Rectified Current @TC=130oC Maximum Ratings 30 150 10000 IF=15A IF=15A IF=30A IF=30A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.65 0.75 1.0 50 1.5 450 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Per Leg) At (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR2545CT thru MBR2560CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers PEAK F ORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES 40 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 30 20 10 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100.0 FIG.4 - TYPICAL FORW ARD CHARACT ERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10.0 TJ = 125 C 10 TJ = 150 C 1.0 TJ = 75 C 1.0 TJ = 25 C 0.1 TJ = 25 C 0.1 0.01 0.001 0 20 40 60 80 100 120 140 0.01 0 0.1 0.2 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) PULSE WIDTH 300us 2% Duty cycle 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF ) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
MBR2550CT
1. 物料型号: - MBR2545CT - MBR2550CT - MBR2560CT

2. 器件简介: - 这些是宽温度范围和高结温肖特基势垒整流器,封装为TO-220AB。

3. 引脚分配: - A=阳极,C=阴极,TAB=阴极。

4. 参数特性: - VRRM(反向击穿电压):MBR2545CT为45V,MBR2550CT为50V,MBR2560CT为60V。 - VRMS(有效值反向击穿电压):MBR2545CT为31.5V,MBR2550CT为35V,MBR2560CT为42V。 - VDC(直流电压):MBR2545CT为45V,MBR2550CT为50V,MBR2560CT为60V。

5. 功能详解: - 这些器件具有金属硅整流器、多数载流子导电、瞬态保护的防护环、低功耗高效率、高电流能力、低正向电压、高浪涌能力等特点。适用于低电压、高频逆变器、自由轮和极性保护应用。

6. 应用信息: - 用于低电压、高频逆变器、自由轮和极性保护应用。

7. 封装信息: - 封装类型:TO-220AB模塑塑料。 - 极性:如本体上标记。 - 重量:0.08盎司,2.24克。 - 安装位置:任意。
MBR2550CT 价格&库存

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