MUR3030

MUR3020, MUR3030 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 VRRM V 200 300 A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 MUR3020 MUR3030 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=145oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 30 300 1.2 0.3 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g MUR3020, MUR3030 Ultra Fast Recovery Diodes Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 0.91 1.25 0.9 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 30 7 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch MUR3020, MUR3030 Ultra Fast Recovery Diodes 60 A IF 40 TVJ=150°C TVJ=100°C TVJ= 25°C 20 200 5 0 0.0 0 100 0 A/ us 1000 -diF/dt 0 200 400 600 A/ us 1000 800 -diF/dt 10 400 Qr 800 TVJ = 100°C nC 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100°C VR = 150V 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100°C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/ us 1000 800 diF/dt TVJ = 100°C IF = 30A 1.2 us 1.0 tfr 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 °C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/ us 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.005 0.0003 0.04 0.1 ZthJC 0.01 1 2 3 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case