MURB1620CT

MURB1610CT thru MURB1620CT Ultra Fast Recovery Diodes C(TAB) A A A A=Anode, C=Cathode, TAB=Cathode C A Dimensions TO-263(D2PAK) Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 MURB1610CT MURB1620CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage Pulse Width=300us Duty Cycle Maximum DC Reverse Current At Rated DC Blocking Voltage IF=8A IF=8A IF=16A IF=16A @TC=120oC TP=10ms TP=8.3ms @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=100oC Maximum Ratings 16 80 90 1.1 1.0 1.25 1.20 5 100 80 30 3.0 -55 to +150 Unit A A VF V IR CJ TRR ROJC uA pF ns o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-263 molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MURB1610CT thru MURB1620CT Ultra Fast Recovery Diodes 16 PEAK FORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 120 100 80 60 40 20 0 1 2 5 10 20 50 100 TP=10ms TP=8.3ms 12 8 4 RESISTIVE OR INDUCTIVE LOAD Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 100.0 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 10.0 TJ = 100 C TJ = 125 C TJ = 75 C 10 TJ = 25 C 1.0 TJ = 25 C 0.1 1.0 0.01 .001 0 20 60 100 140 0.1 0 0.2 0.4 0.6 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PULSE W IDTH 300ua s 2% Duty cycle 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS R