SBG1025L

SBG1025L thru SBG1030L Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode C Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 SBG1025L SBG1030L VRRM V 25 30 VRMS V 17.5 21 VDC V 25 30 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 10 250 0.45 0.35 5.0 500 350 2.0 -55 to +125 -55 to +150 Unit A A V mA pF o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range IF=10A @TJ=25oC IF=10A @TJ=125oC @TJ=25oC @TJ=100oC C/W o o C C NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: D2PAK molded plastic * Polarity: As marked on the body * Weight: 0.06 ounces, 1.7 grams SBG1025L thru SBG1030L Low VF Schottky Barrier Rectifiers