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SBL1050

SBL1050

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    SBL1050 - Low VF Schottky Barrier Rectifiers - Sirectifier Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
SBL1050 数据手册
SBL1050 thru SBL1060 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode SBL1050 SBL1060 VRRM V 50 60 VRMS V 35 42 VDC V 50 60 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 10 250 0.75 @TJ=25 C @TJ=100oC o Unit A A V mA pF o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 10.0A DC (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 1 50 550 2.5 -55 to +125 -55 to +150 C/W o o C C NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any SBL1050 thru SBL1060 Low VF Schottky Barrier Rectifiers 10 PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 300 250 200 150 100 50 0 1 2 5 10 20 50 100 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 100 10 10 TJ = 100 C TJ = 75 C 1.0 1.0 TJ = 25 C 0.1 TJ = 25 C PULSE W IDTH 300ua s 2% Duty cycle 0.01 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACIT ANCE , (pF) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
SBL1050
物料型号: - SBL1050至SBL1060

器件简介: - 这些是低正向电压肖特基势垒整流器,具有金属硅整流器、多数载流子导电、保护环以防止瞬态、低功耗高效率、高电流能力、低正向电压、高浪涌能力等特点。

引脚分配: - A=阳极,C=阴极,TAB=阴极

参数特性: - VRRM(反向工作电压):SBL1050为50V,SBL1060为60V - VRMS(反向峰值电压):SBL1050为35V,SBL1060为42V - VDC(直流正向电压):SBL1050和SBL1060均为各自型号的电压值 - I(AV)(最大平均正向整流电流@Tc=95°C):10A - IFSM(峰值正向浪涌电流):250A - VF(最大正向电压@10.0A DC):0.75V - IR(最大直流反向电流):@TJ=25°C为1mA,@TJ=100°C为50mA - CJ(典型结电容):550pF - ReJc(典型热阻):2.5℃/W - TJ(工作温度范围):-55至+125℃ - TSTG(存储温度范围):-55至+150℃

功能详解: - 这些整流器适用于低电压、高频率逆变器、自由轮和极性保护应用。

应用信息: - 用于低电压、高频率逆变器、自由轮和极性保护应用。

封装信息: - 封装类型:TO-220AC模塑塑料 - 极性:如本体上标记 - 重量:0.08盎司,2.24克 - 安装位置:任意
SBL1050 价格&库存

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