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SBL1630CT

SBL1630CT

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    SBL1630CT - Low VF Schottky Barrier Rectifiers - Sirectifier Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
SBL1630CT 数据手册
SBL1630CT thru SBL1645CT Low VF Schottky Barrier Rectifiers Dimensions TO-220AB A C(TAB) A C A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 SBL1630CT SBL1635CT SBL1640CT SBL1645CT Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 16 250 0.55 @TJ=25 C @TJ=100oC o Unit A A V mA pF o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 0.5 50 350 2.5 -55 to +125 -55 to +150 C/W o o C C NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any SBL1630CT thru SBL1645CT Low VF Schottky Barrier Rectifiers 16 PEAK FORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 300 250 200 150 100 50 0 1 2 5 10 20 50 100 12 8 4 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 100 10 10 TJ = 100 C 1.0 TJ = 75 C 1.0 0.1 TJ = 25 C TJ = 25 C PULSE W IDTH 300ua s 2% Duty cycle 0.01 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
SBL1630CT
1. 物料型号: - SBL1630CT至SBL1645CT是一系列低正向电压肖特基势垒整流器。

2. 器件简介: - 这些器件是金属硅整流器,具有多数载流子导电特性,并且有保护环以提供瞬态保护。它们具有低功耗、高效率、高电流能力、低正向电压下降(VF)、高浪涌能力和适用于低电压、高频率逆变器、自由轮和极性保护应用。

3. 引脚分配: - A代表阳极,C代表阴极,TAB代表阴极。

4. 参数特性: - 包括最大平均正向整流电流(I(AV))、峰值正向浪涌电流(IFSM)、最大正向电压(VF)、最大直流反向电流(IR)、典型结电容(CJ)和典型热阻(ReJc)等。

5. 功能详解: - 这些整流器适用于低电压、高频率的逆变器、自由轮和极性保护应用,具有低功耗、高效率和高浪涌能力。

6. 应用信息: - 适用于低电压、高频率逆变器、自由轮和极性保护应用。

7. 封装信息: - 封装形式为TO-220AB塑料模具,极性标记在器件本体上,重量为0.08盎司或2.24克,可任意位置安装。
SBL1630CT 价格&库存

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