SG7N06P

SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB E C G G=Gate, C=Collector, E=Emitter Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 SG7N06P Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o SG7N06DP Test Conditions Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM=14 @ 0.8 VCES 54 -55...+150 150 -55...+150 Unit V V TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms A A W o VGE=15V; TVJ=125oC; RG=22 (RBSOA) Clamped inductive load, L=300uH PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque, (TO-220) M3 M3.5 C 300 0.45/4 0.55/5 4 o C Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=125 C 1.5 o o Characteristic Values min. 600 2.5 5.5 100 500 ±100 1.8 typ. max. Unit V V uA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG7N06P, SG7N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions o Unit typ. 7 max. S 3 2% 300us, duty cycle 500 VCE=25V; VGE=0V; f=1MHz 50 17 25 IC=IC90; VGE=15V; VCE=0.5VCES o pF 5 10 nC Inductive load, TJ=25 C IC=IC90; VGE=15V; L=300uH VCE=0.8VCES; RG=Roff=22 Remarks:Switching times may increase for VCE(Clamp) increased RG Inductive load, TJ=25oC IC=IC90; VGE=15V; L=300uH VCE=0.8VCES; RG=Roff=22 Remarks:Switching times may increase for VCE(Clamp) higher TJ or increased RG 0.8VCES' 0.8VCES' higher TJ or 9 10 0.07 100 150 0.3 10 15 0.07 200 250 0.6 2.3 0.25 200 250 0.6 ns ns mJ ns ns mJ ns ns mJ ns ns mJ K/W K/W (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 1.96 TVJ=25 C o Unit VF IF=10A; TVJ=150 C V 2.95 2 35 1.6 2.5 A ns K/W IRM trr RthJC VR=100V; IF=25A; -diF/dt=100A/us L 0.05uH; TVJ=100oC IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC Diode