SII200N06

SII200N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol Conditions TC = 25oC, unless otherwise specified Values 600 230(200) 400 730 _ +20 200 400 4.05 2500 Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(50)oC ICRM TC= 50oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII200N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC = 4.0mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE = 0; VGE=20V VCE(sat) Cies Cres LCE Isc TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) max. 6.5 500 400 Units V uA nA V nF nH A IC =200A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: VCC = 300V, IC = 200A RGon = RGoff =1.5 , , Tj = 25(125)oC VGE = ± 15V Tj = 25(125)oC, LS = 15nH o 1.95(2.2) 2.45(-) 6.5 0.6 40 900 td(on) tr td(off) tf Eon(Eoff) RCC'+EE' 163(180) 43(49) 253(285) 33(41) 4.6(6.3) 0.9 0.17 ns ns ns ns mJ m K/W RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 200A; VGE = 0V; Tj = 25(125)oC IRM IF = 200A; Tj = 25(125)oC Qr -di/dt = 4000A/us Erec VGE = -10V, VR=300V RthJC RthCK TVJ TVJM Tstg 1.25(1.2) 1.6(-) 154(188) 12.1(19.7) -(4.1) 0.29 0.02 -40...+125 150 -40...+125 V A uC mJ K/W o C Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 325 Nm Nm g Sirectifier R SII200N06 NPT IGBT Modules Sirectifier R SII200N06 NPT IGBT Modules Sirectifier R