SII400N12

SII400N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min o 400(330) 800(660) _ +20 _ 40...+150(125) 4000 390(260) 800(660) 2900 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(125)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SII400N12 NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC = 12mA VGE = 0; VCE = VCES; Tj = 25oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =300A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ K/W K/W K/W Nm Nm g 5.5 6.45 0.1 0.3 1.4(1.6) 1.6(1.8) 3.66(5) 4.66(6.33) 2.5(3.1) 3(3.7) 22 30 3.3 1.2 4 1.6 20 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 300A; Tj = 25(125)oC Qrr di/dt = 2000A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w res., terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 300A RGon = RGoff =3.3 , Tj = 125oC VGE = ± 15V o 0.35(0.5) 200 115 720 80 38(40) 2(1.8) 2.5 85(140) 13(40) 400 220 900 100 2.5 1.2 3.5 0.05 0.125 0.038 3 5 325