SII50N06

SII50N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol Conditions TC = 25oC, unless otherwise specified Values 600 75(50) 100 280 _ +20 600 50 100 450 2500 Units V A A W V V A A IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(80)oC, Tvj= 150oC ICRM TC= 80oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter VRRM IF IFRM tP =1ms VR=0V, tP =10ms; TVj=125oC I2t Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate As V 2 Sirectifier R SII50N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.0mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres LCE Isc TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) 2.1(2.4) 2.2 0.2 40 225 max. 6.5 500 400 2.6(2.9) Units V uA nA V nF nH A IC =300A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: VCC = 300V, IC = 50A RGon = RGoff =2.7 , , Tj = 25(125)oC VGE = ± 15V Tj = 25(125)oC, LS = 35nH o td(on) tr td(off) tf Eon(Eoff) RCC'+EE' 40(42) 9(10) 120(130) 12(21) 0.5(1.0) 1.2 0.44 ns ns ns ns mJ m K/W RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 50A; VGE = 0V; Tj = 25(125)oC IRM IF = 50A; Tj = 25(125)oC Qr -di/dt = 2900A/us Erec VGE = -10V, VR=300V RthJC RthCK TVJ TVJM Tstg 1.25(1.2) 88(92) 3.4(5.6) -(1.5) 0.03 -40...+125 150 -40...+125 1.6(-) V A uC mJ K/W o 0.8 C Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 160 Nm Nm g Sirectifier R SII50N06 NPT IGBT Modules Sirectifier R SII50N06 NPT IGBT Modules Sirectifier R